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SE8810A

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SE8810A

SINO IC · MOSFETs · SOT-23-6

SE8810A from SINO IC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (20 V VDSS, 7 A continuous drain current rating per FET).
2 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5 (VDS max 20 V).
3 S2 passive Source of MOSFET 2 (20 V VDSS, 7 A continuous drain current rating per FET).
4 G2 input Gate of MOSFET 2, VGS max ±12 V with threshold 0.5 to 1.2 V.
5 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2 (VDS max 20 V).
6 G1 input Gate of MOSFET 1, VGS max ±12 V with threshold 0.5 to 1.2 V.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current, Continuous (Note 1) ID 7 A Note 1 1
Pulsed Drain Current IDM 28 A 1
Drain-Source Diode Forward Current IS 1.7 A 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Drain-Source Breakdown Voltage VDSS 20 V ID=250μA, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=16 V, VGS=0 V 2
Gate-Body Leakage IGSS -10 10 μA VDS=0 V, VGS=±12 V 2
Gate Threshold Voltage VGS(th) 0.5 0.8 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 17 20 mΩ VGS=4.5V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 20 25 mΩ VGS=2.5V, ID=5A 2
Forward Transconductance gFS 19 S VDS=5V, ID=5A 2
Input Capacitance Ciss 693 pF VGS=0V, VDS=8V, f=1.0MHz 2
Output Capacitance Coss 189 pF VGS=0V, VDS=8V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 136 pF VGS=0V, VDS=8V, f=1.0MHz 2
Total Gate Charge Qg 11 nC VGS=4.0V, VDS=10V, ID=5A 2
Gate Source Charge Qgs 1.8 nC VGS=4.0V, VDS=10V, ID=5A 2
Gate Drain Charge Qgd 4.9 nC VGS=4.0V, VDS=10V, ID=5A 2
Turn-On Delay Time td(on) 31 ns VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A 2
Turn-Off Delay Time td(off) 96 ns VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A 2
Turn-On Rise Time td(r) 62 ns VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A 2
Turn-Off Fall Time td(f) 40 ns VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A 2

CAD (KiCad official)

  • Symbol: SE8810A
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: se8810a-etched.step / se8810a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se8810a.step / se8810a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (4 pp, sha256 580a05eac189be5b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF