component
SE8810A
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE8810A
SINO IC · MOSFETs · SOT-23-6
SE8810A from SINO IC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (20 V VDSS, 7 A continuous drain current rating per FET). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5 (VDS max 20 V). |
| 3 | S2 | passive | Source of MOSFET 2 (20 V VDSS, 7 A continuous drain current rating per FET). |
| 4 | G2 | input | Gate of MOSFET 2, VGS max ±12 V with threshold 0.5 to 1.2 V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2 (VDS max 20 V). |
| 6 | G1 | input | Gate of MOSFET 1, VGS max ±12 V with threshold 0.5 to 1.2 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current, Continuous (Note 1) | ID | 7 | A | Note 1 | 1 | ||
| Pulsed Drain Current | IDM | 28 | A | 1 | |||
| Drain-Source Diode Forward Current | IS | 1.7 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.5 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | 20 | V | ID=250μA, VGS=0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=16 V, VGS=0 V | 2 | ||
| Gate-Body Leakage | IGSS | -10 | 10 | μA | VDS=0 V, VGS=±12 V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 20 | mΩ | VGS=4.5V, ID=7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 | 25 | mΩ | VGS=2.5V, ID=5A | 2 | |
| Forward Transconductance | gFS | 19 | S | VDS=5V, ID=5A | 2 | ||
| Input Capacitance | Ciss | 693 | pF | VGS=0V, VDS=8V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 189 | pF | VGS=0V, VDS=8V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 136 | pF | VGS=0V, VDS=8V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 11 | nC | VGS=4.0V, VDS=10V, ID=5A | 2 | ||
| Gate Source Charge | Qgs | 1.8 | nC | VGS=4.0V, VDS=10V, ID=5A | 2 | ||
| Gate Drain Charge | Qgd | 4.9 | nC | VGS=4.0V, VDS=10V, ID=5A | 2 | ||
| Turn-On Delay Time | td(on) | 31 | ns | VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A | 2 | ||
| Turn-Off Delay Time | td(off) | 96 | ns | VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A | 2 | ||
| Turn-On Rise Time | td(r) | 62 | ns | VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A | 2 | ||
| Turn-Off Fall Time | td(f) | 40 | ns | VGEN=4.0V, RGEN=10Ω, VDD=10V, ID=1A | 2 |
CAD (KiCad official)
- Symbol:
SE8810A - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
se8810a-etched.step/se8810a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se8810a.step/se8810a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (4 pp, sha256
580a05eac189be5b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).