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SE4060GB

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SINO IC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 23d ago
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package.json Publish 0.1.0 · Ray 23d ago
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README.md Publish 0.1.0 · Ray 23d ago
se4060gb-etched.glb Publish 0.1.0 · Ray 23d ago
se4060gb-etched.step se4060gb: factory component page (tier=lcsc) · Ray 23d ago
se4060gb-hero.glb se4060gb: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
se4060gb-hero.overlay.json Publish 0.1.0 · Ray 23d ago
se4060gb.glb Publish 0.1.0 · Ray 23d ago
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se4060gb.step Publish 0.1.0 · Ray 23d ago

SE4060GB

SINO IC · MOSFETs · TO-252

SE4060GB from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and an on-resistance of 7.5 mΩ typ at VGS=10 V.
2 Drain passive Drain terminal, rated for 45 V drain-source voltage and 56 A continuous (150 A pulsed) drain current.
3 Source passive Source terminal of the N-channel MOSFET, the reference for the gate drive and the body-diode anode.

Key specifications

Parameter Value
Manufacturer SINO IC
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 45 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, Continuous ID 56 A 1
Drain Current, Pulsed 150 A 1
Avalanche Energy, Single Pulsed EAS 20 mJ Single Pulsed 1
Power Dissipation PD 62.5 W 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 45 V VGS=0 V, ID=250μA 2
Drain to Source Leakage Current IDSS 1 μA VDS= 500V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=30V 2
Gate Threshold Voltage VGS(th) 1 1.55 2.2 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 10 14 mΩ VGS=4.5V, ID=10A 2
Diode Forward Voltage VSD 0.9 1.2 V VGS=0V, IS=20A 2
Thermal Resistance, Junction to Ambient RθJA 50 ℃/W 1
Transconductance gFS 25 S VDS=5V, ID=20A 2
Input Capacitance Ciss 942 pF VGS=0V, VDS=20V, f=1MHz 2
Output Capacitance Coss 309 pF VGS=0V, VDS=20V, f=1MHz 2
Reverse Transfer Capacitance Crss 29 pF VGS=0V, VDS=20V, f=1MHz 2
Total Gate Charge Qg 14.5 nC VGS=10V, VDS=20V, ID=10A 2
Gate Source Charge Qgs 2 nC VGS=10V, VDS=20V, ID=10A 2
Gate Drain Charge Qgd 2.5 nC VGS=10V, VDS=20V, ID=10A 2
Turn-On Delay Time td(on) 6 ns VDS=20V, RGEN=10Ω, ID=10A 2
Turn-Off Delay Time td(off) 21 ns VDS=20V, RGEN=10Ω, ID=10A 2
Turn-On Rise Time td(r) 5 ns VDS=20V, RGEN=10Ω, ID=10A 2
Turn-Off Fall Time td(f) 5 ns VDS=20V, RGEN=10Ω, ID=10A 2
Reverse Recovery Time trr 24 ns VGS=0V, IS=10A, dIF/dt=100A/μs 2
Reverse Recovery Charge QRR 19 nC VGS=0V, IS=10A, dIF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SE4060GB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: se4060gb-etched.step / se4060gb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se4060gb.step / se4060gb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (7 pp, sha256 e44513c12af03345, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF