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SE3082G

Public Made by Adom

by adom

SINO IC MOSFETs, DFN-8(5.2x5.6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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se3082g-etched.step se3082g: factory component page (tier=lcsc) · Ray 17d ago
se3082g-hero.glb se3082g: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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SE3082G

SINO IC · MOSFETs · DFN-8(5.2x5.6)

SE3082G from SINO IC, in a DFN-8(5.2x5.6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; pin 1 is the corner marked with the dot, at the bottom-left of the drawing.
2 G1 input Gate of MOSFET 1; VGS rating is ±20 V.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2; VGS rating is ±20 V.
5 D2 passive Drain of MOSFET 2; the datasheet gives VDS of 30 V.
6 D2 passive Drain of MOSFET 2, joined to the other D2 pin; the datasheet gives VDS of 30 V.
7 D1 passive Drain of MOSFET 1; the datasheet gives VDS of 30 V.
8 D1 passive Drain of MOSFET 1, joined to the other D1 pin; the datasheet gives VDS of 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer SINO IC
Package DFN-8(5.2x5.6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS=32V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=20V 2
Gate Threshold Voltage VGS(th) 1 1.6 3 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 5 7.5 mΩ VGS=10V, ID=25A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=4.5V, ID=25A 2
Forward Transconductance gfs 20 S VDS=5V, ID=24A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current Continuous ID 80 A 1
Drain Current Pulsed ID 170 A 1
Total Power Dissipation PD 3.1 W TA=25℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Junction to Case Thermal Resistance RθJC 1 ℃/W 1
Junction to Ambient Thermal Resistance RθJA 40 ℃/W 1

CAD (KiCad official)

  • Symbol: SE3082G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5.2x5.6) (KiCad packages3D, STEP)
  • 3D model files: se3082g-etched.step / se3082g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se3082g.step / se3082g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (6 pp, sha256 6499ef20bcee060a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF