component
SE2300
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SE2300
SINO IC · MOSFETs · SOT-23
SE2300 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±10 V and a threshold of 1 V min, 1.7 V typ, 3.0 V max at 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS and VDS. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated 20 V drain-source with 5.9 A continuous and 23 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 20V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=10 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 50 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 40 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | 5.9 | A | 1 | |||
| Pulsed Drain Current | ID | 23 | A | 1 | |||
| Total Power Dissipation | PD | 1.2 | W | @TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Junction to Ambient Thermal Resistance | RθJA | 140 | ℃/W | t≦10s | 2 |
CAD (KiCad official)
- Symbol:
SE2300 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
se2300-etched.step/se2300-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2300.step/se2300.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (8 pp, sha256
72192c359e29ed49, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE2300
**SINO IC** · MOSFETs · SOT-23
SE2300 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±10 V and a threshold of 1 V min, 1.7 V typ, 3.0 V max at 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS and VDS. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated 20 V drain-source with 5.9 A continuous and 23 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | μA | VDS= 20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=10 V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 34 | 50 | mΩ | VGS=2.5V, ID=4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 28 | 40 | mΩ | VGS=4.5V, ID=4.5A | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -10 | | 10 | V | | 1 |
| Continuous Drain Current | ID | | | 5.9 | A | | 1 |
| Pulsed Drain Current | ID | | | 23 | A | | 1 |
| Total Power Dissipation | PD | | | 1.2 | W | @TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Junction to Ambient Thermal Resistance | RθJA | | | 140 | ℃/W | t≦10s | 2 |
## CAD (KiCad official)
- Symbol: `SE2300`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `se2300-etched.step` / `se2300-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se2300.step` / `se2300.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884504354705408) (8 pp, sha256 `72192c359e29ed49`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se2300-datasheet.pdf)