component

SE2300

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 16d ago
viewers se2300: viewers · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago
se2300-etched.glb Publish 0.1.0 · Ray 16d ago
se2300-etched.step se2300: factory component page (tier=lcsc) · Ray 16d ago
se2300-hero.glb se2300: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
se2300-hero.overlay.json Publish 0.1.0 · Ray 16d ago
se2300.glb Publish 0.1.0 · Ray 16d ago
se2300.kicad_mod Publish 0.1.0 · Ray 16d ago
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se2300.lbr Publish 0.1.0 · Ray 16d ago
se2300.step Publish 0.1.0 · Ray 16d ago

SE2300

SINO IC · MOSFETs · SOT-23

SE2300 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±10 V and a threshold of 1 V min, 1.7 V typ, 3.0 V max at 250 µA.
2 S passive Source of the N-channel MOSFET, the reference terminal for VGS and VDS.
3 D passive Drain of the N-channel MOSFET, rated 20 V drain-source with 5.9 A continuous and 23 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS= 20V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=10 V 2
Gate Threshold Voltage VGS(th) 1 1.7 3 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 34 50 mΩ VGS=2.5V, ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 28 40 mΩ VGS=4.5V, ID=4.5A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current ID 5.9 A 1
Pulsed Drain Current ID 23 A 1
Total Power Dissipation PD 1.2 W @TA=25℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Junction to Ambient Thermal Resistance RθJA 140 ℃/W t≦10s 2

CAD (KiCad official)

  • Symbol: SE2300
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: se2300-etched.step / se2300-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2300.step / se2300.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (8 pp, sha256 72192c359e29ed49, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF