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SE2102E

SINO IC · MOSFETs · SOT-523

SE2102E from SINO IC, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±6 V absolute maximum.
2 Source passive Source of the N-channel MOSFET; the device is rated for 20 V drain-source voltage and 0.6 A continuous drain current.
3 Drain passive Drain of the N-channel MOSFET; the device is rated for 20 V drain-source voltage, 0.6 A continuous drain current, and 170 mW total power dissipation at TA=25℃.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -6 6 V 1
Drain Current, Continuous ID 0.6 A 1
Total Power Dissipation PD 170 mW TA=25℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 20 26 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS= 16V, VGS=0V 2
Gate-Body Leakage Current IGSS 10 μA VGS=4.5 V 2
Gate Threshold Voltage VGS(th) 0.45 0.9 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 280 350 mΩ VGS=4.5V, ID=600mA 2
Static Drain-Source On-Resistance RDS(ON) 370 470 mΩ VGS=2.5V, ID=500mA 2
Junction to Ambient Thermal Resistance RθJA 140 ℃/W t≦10s 2

CAD (KiCad official)

  • Symbol: SE2102E
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: se2102e-etched.step / se2102e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2102e.step / se2102e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (5 pp, sha256 6dfed1657215b3e0, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF