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SE2102E
Public Made by Adomby adom
SINO IC MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE2102E
SINO IC · MOSFETs · SOT-523
SE2102E from SINO IC, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±6 V absolute maximum. |
| 2 | Source | passive | Source of the N-channel MOSFET; the device is rated for 20 V drain-source voltage and 0.6 A continuous drain current. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; the device is rated for 20 V drain-source voltage, 0.6 A continuous drain current, and 170 mW total power dissipation at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Drain Current, Continuous | ID | 0.6 | A | 1 | |||
| Total Power Dissipation | PD | 170 | mW | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | 26 | V | ID=250μA, VGS=0 V | 2 | |
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 16V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 10 | μA | VGS=4.5 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.9 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 280 | 350 | mΩ | VGS=4.5V, ID=600mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 370 | 470 | mΩ | VGS=2.5V, ID=500mA | 2 | |
| Junction to Ambient Thermal Resistance | RθJA | 140 | ℃/W | t≦10s | 2 |
CAD (KiCad official)
- Symbol:
SE2102E - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
se2102e-etched.step/se2102e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2102e.step/se2102e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (5 pp, sha256
6dfed1657215b3e0, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).