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SE100150G

Public Made by Adom

by adom

SINO IC MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SE100150G

SINO IC · MOSFETs · TO-263

SE100150G from SINO IC, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a gate threshold of 2.0 to 4.0 V at ID=250μA.
2 D passive Drain (also the exposed tab); drain-source voltage is rated at 100 V, with continuous drain current of 150 A and pulsed drain current of 450 A.
3 S passive Source; RDS(ON) is 3.5 mΩ typical (3.81 mΩ max) at VGS=10 V and ID=100 A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=20V 2
Gate Threshold Voltage VGS(th) 2 2.8 4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 3.5 3.81 mΩ VGS=10V, ID=100A 2
Forward Transconductance gFS 50 S VDS=10V, ID=50A 2
Input Capacitance Ciss 6100 pF VGS=0V, VDS=50V, f=1MHz 2
Output Capacitance Coss 480 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse Transfer Capacitance Crss 33 pF VGS=0V, VDS=50V, f=1MHz 2
Total Gate Charge Qg 160 nC VGS=10V, VDS=50V, ID=100A 2
Gate Source Charge Qgs 52 nC VGS=10V, VDS=50V, ID=100A 2
Gate Drain Charge Qgd 29 nC VGS=10V, VDS=50V, ID=100A 2
Turn-On Delay Time td(on) 35 ns VGS=10V, VDS=50V, RGEN=1.6Ω 2
Turn-Off Delay Time td(off) 89 ns VGS=10V, VDS=50V, RGEN=1.6Ω 2
Turn-On Rise Time td(r) 59 ns VGS=10V, VDS=50V, RGEN=1.6Ω 2
Turn-Off Fall Time td(f) 29 ns VGS=10V, VDS=50V, RGEN=1.6Ω 2
Thermal Resistance Junction to Case RθJC 0.53 ℃/W t≤10s 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current Continuous ID 150 A 1
Drain Current Pulsed ID 450 A 1
Single Pulse Avalanche Energy EAS 1000 mJ 1
Total Power Dissipation PD 300 W TC=25℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1

CAD (KiCad official)

  • Symbol: SE100150G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: se100150g-etched.step / se100150g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se100150g.step / se100150g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (8 pp, sha256 9868408c463de6b5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF