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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	23d ago
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README.md	Publish 0.1.0 · Ray	23d ago
se100150g-etched.glb	Publish 0.1.0 · Ray	23d ago
se100150g-etched.step	se100150g: factory component page (tier=lcsc) · Ray	23d ago
se100150g-hero.glb	se100150g: hero GLB from the etched model (keeps the MPN mark) · Ray	23d ago
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se100150g.glb	Publish 0.1.0 · Ray	23d ago
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se100150g.step	Publish 0.1.0 · Ray	23d ago

SE100150G

SINO IC · MOSFETs · TO-263

SE100150G from SINO IC, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage is rated at ±20 V maximum, with a gate threshold of 2.0 to 4.0 V at ID=250μA.
2	D	passive	Drain (also the exposed tab); drain-source voltage is rated at 100 V, with continuous drain current of 150 A and pulsed drain current of 450 A.
3	S	passive	Source; RDS(ON) is 3.5 mΩ typical (3.81 mΩ max) at VGS=10 V and ID=100 A.

Key specifications

Parameter	Value
Manufacturer	SINO IC
Package	TO-263
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	100			V	ID=250μA, VGS=0 V	2
Drain to Source Leakage Current	IDSS			1	μA	VDS=100V, VGS=0V	2
Gate-Body Leakage Current	IGSS			100	nA	VGS=20V	2
Gate Threshold Voltage	VGS(th)	2	2.8	4	V	VDS=VGS, ID=250μA	2
Static Drain-Source On-Resistance	RDS(ON)		3.5	3.81	mΩ	VGS=10V, ID=100A	2
Forward Transconductance	gFS	50			S	VDS=10V, ID=50A	2
Input Capacitance	Ciss		6100		pF	VGS=0V, VDS=50V, f=1MHz	2
Output Capacitance	Coss		480		pF	VGS=0V, VDS=50V, f=1MHz	2
Reverse Transfer Capacitance	Crss		33		pF	VGS=0V, VDS=50V, f=1MHz	2
Total Gate Charge	Qg		160		nC	VGS=10V, VDS=50V, ID=100A	2
Gate Source Charge	Qgs		52		nC	VGS=10V, VDS=50V, ID=100A	2
Gate Drain Charge	Qgd		29		nC	VGS=10V, VDS=50V, ID=100A	2
Turn-On Delay Time	td(on)		35		ns	VGS=10V, VDS=50V, RGEN=1.6Ω	2
Turn-Off Delay Time	td(off)		89		ns	VGS=10V, VDS=50V, RGEN=1.6Ω	2
Turn-On Rise Time	td(r)		59		ns	VGS=10V, VDS=50V, RGEN=1.6Ω	2
Turn-Off Fall Time	td(f)		29		ns	VGS=10V, VDS=50V, RGEN=1.6Ω	2
Thermal Resistance Junction to Case	RθJC			0.53	℃/W	t≤10s	2
Drain-Source Voltage	VDS			100	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Drain Current Continuous	ID			150	A		1
Drain Current Pulsed	ID			450	A		1
Single Pulse Avalanche Energy	EAS			1000	mJ		1
Total Power Dissipation	PD			300	W	TC=25℃	1
Operating Junction Temperature Range	TJ	-55		175	℃		1

CAD (KiCad official)

Symbol: SE100150G
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: TO-263 (KiCad packages3D, STEP)
3D model files: se100150g-etched.step / se100150g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se100150g.step / se100150g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SINO IC datasheet (8 pp, sha256 9868408c463de6b5, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF