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SE01P13K

Public Made by Adom

by adom

SINO IC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SE01P13K

SINO IC · MOSFETs · TO-252

SE01P13K from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±20 V and the gate threshold is -1 V min, -1.9 V typ, -3 V max.
2 D passive Drain, also connected to the top-side tab as labelled in the package drawing; VDS is rated -100 V and continuous ID is -13 A.
3 S passive Source of the P-channel MOSFET; pulsed drain current is rated -30 A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V ID=-250μA, VGS=0 V 2
Gate Threshold Voltage VGS(th) -1 -1.9 -3 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 170 200 mΩ VGS=-10V, ID=-16A 2
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, Continuous ID -13 A 1
Drain Current, Pulsed ID -30 A 1
Total Power Dissipation PD 40 W TA=25℃ 1
Single Pulse Avalanche Energy EAS 110 mJ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 3.13 ℃/W 1
Drain to Source Leakage Current IDSS -1 μA VDS=-100V, VGS=0V 2
Gate-Body Leakage Current IGSS 10 μA VGS=20V 2
Diode Forward Voltage VSD -1.2 V IS=-10A,VGS=0V 2
Forward Transconductance gfs 12 S VDS=-15V, ID=-5A 2
Input Capacitance Ciss 760 pF VGS=0V, VDS=-25V, f=1MHz 2
Output Capacitance Coss 260 pF VGS=0V, VDS=-25V, f=1MHz 2
Reverse Transfer Capacitance Crss 170 pF VGS=0V, VDS=-25V, f=1MHz 2
Turn-On Delay Time td(on) 14 ns VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A 2
Turn-Off Delay Time td(off) 50 ns VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A 2
Turn-On Rise Time td(r) 18 ns VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A 2
Turn-Off Fall Time td(f) 18 ns VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A 2
Continuous Source Current IS 130 mA 2
Reverse Recovery Time trr 35 nS TJ=25℃, IF=-10A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 46 nc TJ=25℃, IF=-10A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SE01P13K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: se01p13k-etched.step / se01p13k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se01p13k.step / se01p13k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (6 pp, sha256 8682cb87e142538b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF