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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	16d ago
viewers	se01p13k: viewers · Ray	16d ago
package.json	Publish 0.1.0 · Ray	16d ago
page.json	Set visibility: public · Ray	16d ago
README.md	Publish 0.1.0 · Ray	16d ago
se01p13k-etched.glb	Publish 0.1.0 · Ray	16d ago
se01p13k-etched.step	se01p13k: factory component page (tier=lcsc) · Ray	16d ago
se01p13k-hero.glb	se01p13k: hero GLB from the etched model (keeps the MPN mark) · Ray	16d ago
se01p13k-hero.overlay.json	Publish 0.1.0 · Ray	16d ago
se01p13k.glb	Publish 0.1.0 · Ray	16d ago
se01p13k.kicad_mod	Publish 0.1.0 · Ray	16d ago
se01p13k.kicad_sym	Publish 0.1.0 · Ray	16d ago
se01p13k.lbr	Publish 0.1.0 · Ray	16d ago
se01p13k.step	Publish 0.1.0 · Ray	16d ago

SE01P13K

SINO IC · MOSFETs · TO-252

SE01P13K from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage is limited to ±20 V and the gate threshold is -1 V min, -1.9 V typ, -3 V max.
2	D	passive	Drain, also connected to the top-side tab as labelled in the package drawing; VDS is rated -100 V and continuous ID is -13 A.
3	S	passive	Source of the P-channel MOSFET; pulsed drain current is rated -30 A.

Key specifications

Parameter	Value
Manufacturer	SINO IC
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	-100			V	ID=-250μA, VGS=0 V	2
Gate Threshold Voltage	VGS(th)	-1	-1.9	-3	V	VDS= VGS, ID=250μA	2
Static Drain-Source On-Resistance	RDS(ON)		170	200	mΩ	VGS=-10V, ID=-16A	2
Drain-Source Voltage	VDS			-100	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Drain Current, Continuous	ID			-13	A		1
Drain Current, Pulsed	ID			-30	A		1
Total Power Dissipation	PD			40	W	TA=25℃	1
Single Pulse Avalanche Energy	EAS			110	mJ		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance, Junction to Case	RθJC			3.13	℃/W		1
Drain to Source Leakage Current	IDSS			-1	μA	VDS=-100V, VGS=0V	2
Gate-Body Leakage Current	IGSS			10	μA	VGS=20V	2
Diode Forward Voltage	VSD			-1.2	V	IS=-10A,VGS=0V	2
Forward Transconductance	gfs		12		S	VDS=-15V, ID=-5A	2
Input Capacitance	Ciss		760		pF	VGS=0V, VDS=-25V, f=1MHz	2
Output Capacitance	Coss		260		pF	VGS=0V, VDS=-25V, f=1MHz	2
Reverse Transfer Capacitance	Crss		170		pF	VGS=0V, VDS=-25V, f=1MHz	2
Turn-On Delay Time	td(on)		14		ns	VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A	2
Turn-Off Delay Time	td(off)		50		ns	VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A	2
Turn-On Rise Time	td(r)		18		ns	VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A	2
Turn-Off Fall Time	td(f)		18		ns	VDS=-50V, VGS=-10V, RGEN=9.1Ω, ID=-10A	2
Continuous Source Current	IS		130		mA		2
Reverse Recovery Time	trr		35		nS	TJ=25℃, IF=-10A, di/dt=100A/μs	2
Reverse Recovery Charge	Qrr		46		nc	TJ=25℃, IF=-10A, di/dt=100A/μs	2

CAD (KiCad official)

Symbol: SE01P13K
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: se01p13k-etched.step / se01p13k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se01p13k.step / se01p13k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SINO IC datasheet (6 pp, sha256 8682cb87e142538b, retrieved 2026-10-19, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF