# SDM017G10DB

**SINEDEVICE** · MOSFETs · TO-252

SDM017G10DB from SINEDEVICE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1.2 V min to 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain, the middle lead, connected to the exposed drain tab; VDS max 100 V and continuous ID 40 A at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current IS max 52 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SINEDEVICE |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 40 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 25 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 116 | A |  | 1 |
| Avalanche Current | IAS |  |  | 22 | A | L=100μH, VGS=10V, VDS=50V (note 3) | 1 |
| Avalanche Energy | EAS |  |  | 24 | mJ | L=100μH, VGS=10V, VDS=50V (note 3) | 1 |
| Power Dissipation | PD |  |  | 52 | W | TC=25°C | 1 |
| Power Dissipation | PD |  |  | 21 | W | TC=100°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=80V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | μA | VDS=80V, VGS=0V, TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 14 | 17 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18.5 | 23 | mΩ | VGS=4.5V, ID=6A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 52 | A |  | 2 |
| Thermal resistance from junction to case | RθJC |  | 1.8 | 2.4 | °C /W |  | 3 |
| Thermal resistance from junction to ambient | RθJA |  | 42 | 50 | °C /W |  | 3 |

## CAD (KiCad official)

- Symbol: `SDM017G10DB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sdm017g10db-etched.step` / `sdm017g10db-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sdm017g10db.step` / `sdm017g10db.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SINEDEVICE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603363570469904384) (7 pp, sha256 `72f035f829b9531b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sdm017g10db-datasheet.pdf)