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SDM017G10DB

Public Made by Adom

by adom

SINEDEVICE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SDM017G10DB

SINEDEVICE · MOSFETs · TO-252

SDM017G10DB from SINEDEVICE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 1.2 V min to 2.5 V max at ID=250μA.
2 D passive Drain, the middle lead, connected to the exposed drain tab; VDS max 100 V and continuous ID 40 A at TC=25°C.
3 S passive Source; body-diode continuous current IS max 52 A.

Key specifications

Parameter Value
Manufacturer SINEDEVICE
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 40 A TC=25°C 1
Continuous Drain Current ID 25 A TC=100°C 1
Pulsed Drain Current IDM 116 A 1
Avalanche Current IAS 22 A L=100μH, VGS=10V, VDS=50V (note 3) 1
Avalanche Energy EAS 24 mJ L=100μH, VGS=10V, VDS=50V (note 3) 1
Power Dissipation PD 52 W TC=25°C 1
Power Dissipation PD 21 W TC=100°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 100 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=80V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=80V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.9 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 14 17 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 18.5 23 mΩ VGS=4.5V, ID=6A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 52 A 2
Thermal resistance from junction to case RθJC 1.8 2.4 °C /W 3
Thermal resistance from junction to ambient RθJA 42 50 °C /W 3

CAD (KiCad official)

  • Symbol: SDM017G10DB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sdm017g10db-etched.step / sdm017g10db-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sdm017g10db.step / sdm017g10db.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINEDEVICE datasheet (7 pp, sha256 72f035f829b9531b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF