# SDH8303

**Hangzhou Silan Microelectronics** · AC-DC Controllers And Regulators · DIP-8

SDH8303 from Hangzhou Silan Microelectronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | power_in | Source of the internal power MOSFET and the reference ground for the control circuit; the datasheet gives no separate voltage limit for this pin. |
| 2 | SOURCE | power_in | Source of the internal power MOSFET and the reference ground for the control circuit (pin 2 is internally tied to pin 1 in the package), with no separate voltage limit stated. |
| 3 | FB | input | Feedback input: the FB current sets the light-load burst mode (shutdown at 0.85 mA, restart after a 70 µA drop), frequency foldback between 625 µA and 695 µA, and overload/short-circuit detection below 450 µA; absolute maximum feedback current is 3 mA. |
| 4 | VDD | power_in | Supply pin for the control circuit: operating range 10 V to 25 V after start-up, start-up at 14.3 V, undervoltage lockout at 8.9 V, overvoltage protection at 28 V, clamp at 30 V, and absolute maximum VDD of 30 V. |
| 5 | NC | unconnected | No internal connection; the datasheet specifies this pin as floating (悬空). |
| 6 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |
| 7 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |
| 8 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | DIP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-gate voltage (RGS=1MΩ) | VDGR |  |  | 650 | V | RGS=1MΩ | 2 |
| Gate-source (ground) voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain pulse current | IDM |  |  | 6 | A | Pulse width limited by maximum junction temperature | 2 |
| Drain continuous current | ID |  |  | 1 | A | Tamb=25°C | 2 |
| Single pulse avalanche energy | EAS |  |  | 30 | mJ | L=51mH, TJ=25°C (start) | 2 |
| High-voltage input | VHV,MAX |  |  | 650 | V |  | 2 |
| Supply voltage | VDD,MAX |  |  | 30 | V |  | 2 |
| Feedback current | IFB |  |  | 3 | mA |  | 2 |
| Power dissipation | PD |  |  | 6.3 | W |  | 2 |
| Operating junction temperature | TJ |  |  | 150 | °C |  | 2 |
| Operating ambient temperature range | Tamb | -20 |  | 85 | °C |  | 2 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 2 |
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=50µA | 3 |
| Zero-gate-voltage drain current | IDSS |  |  | 50 | µA | VDS=650V, VGS=0V | 3 |
| Zero-gate-voltage drain current | IDSS |  |  | 200 | µA | VDS=480V, VGS=0V, Tamb=125°C | 3 |
| Static drain-source on-resistance | RDS(ON) | 7 | 10 | 13 | Ω | VGS=10V, ID=0.5A | 3 |
| Operating voltage range | VDD | 10 |  | 25 | V | After start-up | 3 |
| VDD start-up voltage | VDDON | 13.6 | 14.3 | 15 | V | IFB=0.5mA | 3 |
| VDD under-voltage protection point | VDDOFF | 8.3 | 8.9 | 9.5 | V | IFB=0.5mA | 3 |
| VDD start/under-voltage hysteresis | VDDHYS | 4.1 | 5.4 | 6.7 | V |  | 3 |
| Normal operating switching frequency | fSW1 | 54 | 60 | 66 | KHz | IFB=0.5mA | 3 |
| Frequency jitter range | fJIT | -2 |  | 2 | KHz | IFB=0.5mA | 3 |
| Maximum duty cycle | DMAX | 75 | 80 | 85 | % | IFB=0.5mA | 3 |
| FB shutdown current | IFBSD | 0.74 | 0.85 | 1 | mA |  | 4 |
| Peak current limit point | IPKLIM | 600 | 700 | 800 | mA | IFB=0mA | 4 |
| Thermal resistance, junction-to-ambient | θja |  | 70 |  | °C/W |  | 2 |
| Thermal resistance, junction-to-case (surface) | θjc |  | 20 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SDH8303`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files: `sdh8303-etched.step` / `sdh8303-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sdh8303.step` / `sdh8303.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889781472268288) (9 pp, sha256 `f18242529b7d5e6c`, retrieved 2026-10-19, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sdh8303-datasheet.pdf)