component
SDH8303
Public Made by Adomby adom
Hangzhou Silan Microelectronics AC-DC Controllers And Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSDH8303
Hangzhou Silan Microelectronics · AC-DC Controllers And Regulators · DIP-8
SDH8303 from Hangzhou Silan Microelectronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | power_in | Source of the internal power MOSFET and the reference ground for the control circuit; the datasheet gives no separate voltage limit for this pin. |
| 2 | SOURCE | power_in | Source of the internal power MOSFET and the reference ground for the control circuit (pin 2 is internally tied to pin 1 in the package), with no separate voltage limit stated. |
| 3 | FB | input | Feedback input: the FB current sets the light-load burst mode (shutdown at 0.85 mA, restart after a 70 µA drop), frequency foldback between 625 µA and 695 µA, and overload/short-circuit detection below 450 µA; absolute maximum feedback current is 3 mA. |
| 4 | VDD | power_in | Supply pin for the control circuit: operating range 10 V to 25 V after start-up, start-up at 14.3 V, undervoltage lockout at 8.9 V, overvoltage protection at 28 V, clamp at 30 V, and absolute maximum VDD of 30 V. |
| 5 | NC | unconnected | No internal connection; the datasheet specifies this pin as floating (悬空). |
| 6 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |
| 7 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |
| 8 | DRAIN | passive | Drain of the internal high-voltage power MOSFET and high-voltage start-up input; drain-source breakdown is 650 V minimum, continuous drain current 1 A at Tamb = 25 °C, and pulsed drain current 6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | DIP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-gate voltage (RGS=1MΩ) | VDGR | 650 | V | RGS=1MΩ | 2 | ||
| Gate-source (ground) voltage | VGS | -30 | 30 | V | 2 | ||
| Drain pulse current | IDM | 6 | A | Pulse width limited by maximum junction temperature | 2 | ||
| Drain continuous current | ID | 1 | A | Tamb=25°C | 2 | ||
| Single pulse avalanche energy | EAS | 30 | mJ | L=51mH, TJ=25°C (start) | 2 | ||
| High-voltage input | VHV,MAX | 650 | V | 2 | |||
| Supply voltage | VDD,MAX | 30 | V | 2 | |||
| Feedback current | IFB | 3 | mA | 2 | |||
| Power dissipation | PD | 6.3 | W | 2 | |||
| Operating junction temperature | TJ | 150 | °C | 2 | |||
| Operating ambient temperature range | Tamb | -20 | 85 | °C | 2 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 2 | ||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=50µA | 3 | ||
| Zero-gate-voltage drain current | IDSS | 50 | µA | VDS=650V, VGS=0V | 3 | ||
| Zero-gate-voltage drain current | IDSS | 200 | µA | VDS=480V, VGS=0V, Tamb=125°C | 3 | ||
| Static drain-source on-resistance | RDS(ON) | 7 | 10 | 13 | Ω | VGS=10V, ID=0.5A | 3 |
| Operating voltage range | VDD | 10 | 25 | V | After start-up | 3 | |
| VDD start-up voltage | VDDON | 13.6 | 14.3 | 15 | V | IFB=0.5mA | 3 |
| VDD under-voltage protection point | VDDOFF | 8.3 | 8.9 | 9.5 | V | IFB=0.5mA | 3 |
| VDD start/under-voltage hysteresis | VDDHYS | 4.1 | 5.4 | 6.7 | V | 3 | |
| Normal operating switching frequency | fSW1 | 54 | 60 | 66 | KHz | IFB=0.5mA | 3 |
| Frequency jitter range | fJIT | -2 | 2 | KHz | IFB=0.5mA | 3 | |
| Maximum duty cycle | DMAX | 75 | 80 | 85 | % | IFB=0.5mA | 3 |
| FB shutdown current | IFBSD | 0.74 | 0.85 | 1 | mA | 4 | |
| Peak current limit point | IPKLIM | 600 | 700 | 800 | mA | IFB=0mA | 4 |
| Thermal resistance, junction-to-ambient | θja | 70 | °C/W | 2 | |||
| Thermal resistance, junction-to-case (surface) | θjc | 20 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SDH8303 - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
sdh8303-etched.step/sdh8303-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sdh8303.step/sdh8303.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256
f18242529b7d5e6c, retrieved 2026-10-19, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).