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SCTW70N120G2V
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STMicroelectronics Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SCTW70N120G2V
STMicroelectronics · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
SCTW70N120G2V from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the SiC MOSFET; the absolute maximum VGS is -10 to 22 V and the recommended operating range is -5 to 18 V. |
| 2 | D | passive | Drain terminal, also connected to the tab; the datasheet rates VDS at 1200 V and continuous ID at 91 A for TC = 25 °C. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate voltage or current limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
SCTW70N120G2V - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
sctw70n120g2v-etched.step/sctw70n120g2v-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sctw70n120g2v.step/sctw70n120g2v.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
56835a5c5b0c794d, retrieved 2026-10-11, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SCTW70N120G2V
**STMicroelectronics** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
SCTW70N120G2V from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the SiC MOSFET; the absolute maximum VGS is -10 to 22 V and the recommended operating range is -5 to 18 V. |
| 2 | D | passive | Drain terminal, also connected to the tab; the datasheet rates VDS at 1200 V and continuous ID at 91 A for TC = 25 °C. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate voltage or current limit for this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `SCTW70N120G2V`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `sctw70n120g2v-etched.step` / `sctw70n120g2v-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sctw70n120g2v.step` / `sctw70n120g2v.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/sctw70n120g2v.pdf) (12 pp, sha256 `56835a5c5b0c794d`, retrieved 2026-10-11, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sctw70n120g2v-datasheet.pdf)