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SCTW70N120G2V

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STMicroelectronics Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SCTW70N120G2V

STMicroelectronics · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

SCTW70N120G2V from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the SiC MOSFET; the absolute maximum VGS is -10 to 22 V and the recommended operating range is -5 to 18 V.
2 D passive Drain terminal, also connected to the tab; the datasheet rates VDS at 1200 V and continuous ID at 91 A for TC = 25 °C.
3 S passive Source terminal of the MOSFET; the datasheet gives no separate voltage or current limit for this pin.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

CAD (KiCad official)

  • Symbol: SCTW70N120G2V
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: sctw70n120g2v-etched.step / sctw70n120g2v-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sctw70n120g2v.step / sctw70n120g2v.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 56835a5c5b0c794d, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF