SCT2630STER

{
 "schema": "adom.pads/1",
 "slug": "sct2630ster",
 "footprint": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm",
 "generated_from": {
  "footprint": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm@sha256:5848244c5e72002e",
  "pins": "page.json:component.pins",
  "overrides": null
 },
 "pin1": {
  "pad": "1",
  "at": [
   -2.475,
   -1.905
  ],
  "corner": "top-left",
  "source": "silk-marker",
  "derived_from": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm@sha256:5848244c5e72002e"
 },
 "pad_count": 9,
 "symbol_pins": [
  "1",
  "2",
  "3",
  "4",
  "5",
  "6",
  "7",
  "8",
  "9"
 ],
 "paste_apertures": 4,
 "issues": [],
 "pads": [
  {
   "pad": "1",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    -1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "1",
   "name": "BOOT",
   "type": "passive",
   "description": "Bootstrap supply for the high-side power MOSFET gate driver. Connect a 0.1uF capacitor from BOOT to SW; the cap is charged when SW is low. Absolute max 72V; BOOT-SW absolute max 6V.",
   "is_pin1": true,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "2",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    -0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "2",
   "name": "VIN",
   "type": "power_in",
   "description": "Input supply voltage, 4.2V to 60V operating (absolute max 65V). Connect a local high-frequency bypass capacitor from VIN to GND with the shortest possible path.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "3",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "3",
   "name": "EN",
   "type": "input",
   "description": "Enable pin with internal 1uA/4uA pull-up current source. Pull below 1.05V to disable, above 1.2V to enable. May float or tie to VIN to auto-enable; a VIN-to-GND resistor divider on EN sets a programmable UVLO threshold. Absolute max 65V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "4",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "4",
   "name": "RT/CLK",
   "type": "bidirectional",
   "description": "Sets internal oscillator frequency via a resistor to GND (100 kHz-1.2 MHz), or accepts an external clock for PLL sync (100 kHz-1.2 MHz, high ≥2V, low ≤0.4V, pulse width >80ns). Typical pin voltage 0.5V in RT mode. If external clock stops, mode reverts automatically to resistor-programmed frequency. Absolute max 6V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "5",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "5",
   "name": "FB",
   "type": "input",
   "description": "Inverting input of the trans-conductance error amplifier. External resistor divider from VOUT to GND ties to FB; device regulates FB to the internal 0.8V (±1%) reference. Absolute max 6V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "6",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "6",
   "name": "COMP",
   "type": "output",
   "description": "Error amplifier output for external loop compensation network (typ. series R-C to GND). COMP clamps at ~2.25V high and ~0.47V low; EA gm = 240 µA/V, source/sink current 24 µA. Absolute max 6V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "7",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    -0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "7",
   "name": "GND",
   "type": "power_in",
   "description": "Device ground return. Connect directly to the input bypass capacitor return with a low-impedance path; tie to the exposed thermal pad.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "8",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    -1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "8",
   "name": "SW",
   "type": "power_out",
   "description": "Switching node - source of the internal 220mΩ high-side MOSFET. Connect to the external power inductor and (for asynchronous operation) the anode of a Schottky freewheeling diode. Absolute max range -1V to 65V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "9",
   "kind": "smd",
   "shape": "rect",
   "at": [
    0.0,
    0.0
   ],
   "rot": 0.0,
   "size": [
    2.41,
    3.3
   ],
   "layers": [],
   "thermal": true,
   "pin": "9",
   "name": "Thermal Pad",
   "type": "power_in",
   "description": "Exposed die-pad for heat dissipation. Electrically connected to GND (pin 7) and must be soldered to the PCB ground plane for proper operation and optimum thermal performance (θJA ≈ 42 °C/W).",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  }
 ]
}