# SBT10150LCT_T0_00001

**PANJIT International** · Schottky Diodes · TO-220AB

SBT10150LCT_T0_00001 from PANJIT International, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (marked AC 1 in the package drawing); 150 V VRRM and 5 A average forward current per diode. |
| 2 | K | passive | Common cathode of both diodes (center pin 2, also the tab); 10 A total average forward current per device. |
| 3 | A2 | passive | Anode of the second Schottky diode (marked AC 3 in the package drawing); 150 V VRRM and 5 A average forward current per diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | TO-220AB |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 150 | V |  | 1 |
| Maximum rms voltage | VRMS |  |  | 105 | V |  | 1 |
| Maximum dc blocking voltage | VR |  |  | 150 | V |  | 1 |
| Maximum average forward rectified current per device | I F(AV) |  |  | 10 | A | per device | 1 |
| Maximum average forward rectified current per diode | I F(AV) |  |  | 5 | A | per diode | 1 |
| Peak forward surge current | I FSM |  |  | 80 | A | 8.3ms single half sine-wave superimposed on rated load | 1 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 1 |
| Breakdown voltage per diode | VBR | 150 |  |  | V | IR=0.5mA, TJ=25°C | 1 |
| Instantaneous forward voltage per diode | VF |  |  | 0.86 | V | IF=5A, TJ=25°C | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.64 |  | V | IF=1A, TJ=25°C | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.75 |  | V | IF=3A, TJ=25°C | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.81 |  | V | IF=5A, TJ=25°C | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.51 |  | V | IF=1A, TJ=125°C | 1 |
| Instantaneous forward voltage per diode | VF |  | 0.61 |  | V | IF=3A, TJ=125°C | 1 |
| Reverse current per diode | I R |  | 1 |  | μA | VR=120V, TJ=25°C | 1 |
| Reverse current per diode | I R |  |  | 1.5 | μA | VR=150V, TJ=25°C | 1 |
| Reverse current per diode | I R |  |  | 40 | mA | VR=150V, TJ=125°C | 1 |
| Typical thermal resistance (junction to case) | R ΘJC |  | 2 |  | °C/W | Note 1: device mounted on infinite heatsink | 1 |

## CAD (KiCad official)

- Symbol: `SBT10150LCT_T0_00001`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `sbt10150lct-t0-00001-etched.step` / `sbt10150lct-t0-00001-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbt10150lct-t0-00001.step` / `sbt10150lct-t0-00001.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PANJIT International datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590292709316997120) (4 pp, sha256 `c814646a6073e3f3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sbt10150lct-t0-00001-datasheet.pdf)