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Contents

README

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SBT10150LCT_T0_00001

PANJIT International · Schottky Diodes · TO-220AB

SBT10150LCT_T0_00001 from PANJIT International, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (marked AC 1 in the package drawing); 150 V VRRM and 5 A average forward current per diode.
2 K passive Common cathode of both diodes (center pin 2, also the tab); 10 A total average forward current per device.
3 A2 passive Anode of the second Schottky diode (marked AC 3 in the package drawing); 150 V VRRM and 5 A average forward current per diode.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package TO-220AB
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum repetitive peak reverse voltage VRRM 150 V 1
Maximum rms voltage VRMS 105 V 1
Maximum dc blocking voltage VR 150 V 1
Maximum average forward rectified current per device I F(AV) 10 A per device 1
Maximum average forward rectified current per diode I F(AV) 5 A per diode 1
Peak forward surge current I FSM 80 A 8.3ms single half sine-wave superimposed on rated load 1
Operating junction temperature range TJ -55 150 °C 1
Storage temperature range TSTG -55 150 °C 1
Breakdown voltage per diode VBR 150 V IR=0.5mA, TJ=25°C 1
Instantaneous forward voltage per diode VF 0.86 V IF=5A, TJ=25°C 1
Instantaneous forward voltage per diode VF 0.64 V IF=1A, TJ=25°C 1
Instantaneous forward voltage per diode VF 0.75 V IF=3A, TJ=25°C 1
Instantaneous forward voltage per diode VF 0.81 V IF=5A, TJ=25°C 1
Instantaneous forward voltage per diode VF 0.51 V IF=1A, TJ=125°C 1
Instantaneous forward voltage per diode VF 0.61 V IF=3A, TJ=125°C 1
Reverse current per diode I R 1 μA VR=120V, TJ=25°C 1
Reverse current per diode I R 1.5 μA VR=150V, TJ=25°C 1
Reverse current per diode I R 40 mA VR=150V, TJ=125°C 1
Typical thermal resistance (junction to case) R ΘJC 2 °C/W Note 1: device mounted on infinite heatsink 1

CAD (KiCad official)

  • Symbol: SBT10150LCT_T0_00001
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: sbt10150lct-t0-00001-etched.step / sbt10150lct-t0-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbt10150lct-t0-00001.step / sbt10150lct-t0-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (4 pp, sha256 c814646a6073e3f3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF