component
SBT10100FCT
Public Made by Adomby adom
DIYI Elec Tech Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SBT10100FCT
DIYI Elec Tech · Schottky Diodes · TO-220AB-3
SBT10100FCT from DIYI Elec Tech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (pin 1), rated 100 V VRRM and 5 A average forward current per diode. |
| 2 | K | passive | Common cathode of both diodes (pin 2, shown as CASE in the diagram), 10 A total average forward current per device. |
| 3 | A2 | passive | Anode of the second Schottky diode (pin 3), rated 100 V VRRM and 5 A average forward current per diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | 1 | |||
| Maximum average forward rectified current (per diode) | IF(AV) | 10 | A | per diode | 1 | ||
| Maximum average forward rectified current (per device) | IF(AV) | 5 | A | per device | 1 | ||
| Peak forward surge current | IFSM | 80 | A | 8.3ms single half sine-wave superimposed on rated load, per diode | 1 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum rms voltage | VRMS | 70 | V | 1 | |||
| Breakdown voltage per diode | VBR | 100 | V | IR=0.5mA | 2 | ||
| Instantaneous forward voltage per diode, TJ=25°C, IF=1A | VF | 0.45 | V | IF=1A, TJ=25°C | 2 | ||
| Instantaneous forward voltage per diode, TJ=25°C, IF=2A | VF | 0.51 | V | IF=2A, TJ=25°C | 2 | ||
| Instantaneous forward voltage per diode, TJ=25°C, IF=5A | VF | 0.68 | 0.75 | V | IF=5A, TJ=25°C | 2 | |
| Instantaneous forward voltage per diode, TJ=125°C, IF=1A | VF | 0.36 | V | IF=1A, TJ=125°C | 2 | ||
| Instantaneous forward voltage per diode, TJ=125°C, IF=2A | VF | 0.46 | V | IF=2A, TJ=125°C | 2 | ||
| Instantaneous forward voltage per diode, TJ=125°C, IF=5A | VF | 0.62 | V | IF=5A, TJ=125°C | 2 | ||
| Reverse current per diode | IR | 1.8 | A | VR=70V | 2 | ||
| Reverse current per diode, TJ=25°C | IR | 3 | A | VR=100V, TJ=25°C | 2 | ||
| Reverse current per diode, TJ=125°C | IR | 50 | mA | VR=100V, TJ=125°C | 2 | ||
| Typical thermal resistance per diode | RJC | 4.5 | °C/W | per diode, mounted on infinite heatsink (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
SBT10100FCT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
sbt10100fct-etched.step/sbt10100fct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbt10100fct.step/sbt10100fct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DIYI Elec Tech datasheet (4 pp, sha256
e0ac48ec485e9cd4, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SBT10100FCT
**DIYI Elec Tech** · Schottky Diodes · TO-220AB-3
SBT10100FCT from DIYI Elec Tech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (pin 1), rated 100 V VRRM and 5 A average forward current per diode. |
| 2 | K | passive | Common cathode of both diodes (pin 2, shown as CASE in the diagram), 10 A total average forward current per device. |
| 3 | A2 | passive | Anode of the second Schottky diode (pin 3), rated 100 V VRRM and 5 A average forward current per diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 100 | V | | 1 |
| Maximum average forward rectified current (per diode) | IF(AV) | | | 10 | A | per diode | 1 |
| Maximum average forward rectified current (per device) | IF(AV) | | | 5 | A | per device | 1 |
| Peak forward surge current | IFSM | | | 80 | A | 8.3ms single half sine-wave superimposed on rated load, per diode | 1 |
| Operating junction temperature range | TJ | -55 | | 150 | °C | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | °C | | 1 |
| Maximum rms voltage | VRMS | | | 70 | V | | 1 |
| Breakdown voltage per diode | VBR | 100 | | | V | IR=0.5mA | 2 |
| Instantaneous forward voltage per diode, TJ=25°C, IF=1A | VF | | 0.45 | | V | IF=1A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode, TJ=25°C, IF=2A | VF | | 0.51 | | V | IF=2A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode, TJ=25°C, IF=5A | VF | | 0.68 | 0.75 | V | IF=5A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode, TJ=125°C, IF=1A | VF | | 0.36 | | V | IF=1A, TJ=125°C | 2 |
| Instantaneous forward voltage per diode, TJ=125°C, IF=2A | VF | | 0.46 | | V | IF=2A, TJ=125°C | 2 |
| Instantaneous forward voltage per diode, TJ=125°C, IF=5A | VF | | 0.62 | | V | IF=5A, TJ=125°C | 2 |
| Reverse current per diode | IR | | 1.8 | | A | VR=70V | 2 |
| Reverse current per diode, TJ=25°C | IR | | | 3 | A | VR=100V, TJ=25°C | 2 |
| Reverse current per diode, TJ=125°C | IR | | | 50 | mA | VR=100V, TJ=125°C | 2 |
| Typical thermal resistance per diode | RJC | | 4.5 | | °C/W | per diode, mounted on infinite heatsink (Note 1) | 1 |
## CAD (KiCad official)
- Symbol: `SBT10100FCT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `sbt10100fct-etched.step` / `sbt10100fct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbt10100fct.step` / `sbt10100fct.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DIYI Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603047360863739904) (4 pp, sha256 `e0ac48ec485e9cd4`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sbt10100fct-datasheet.pdf)