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SBT10100FCT

DIYI Elec Tech · Schottky Diodes · TO-220AB-3

SBT10100FCT from DIYI Elec Tech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (pin 1), rated 100 V VRRM and 5 A average forward current per diode.
2 K passive Common cathode of both diodes (pin 2, shown as CASE in the diagram), 10 A total average forward current per device.
3 A2 passive Anode of the second Schottky diode (pin 3), rated 100 V VRRM and 5 A average forward current per diode.

Key specifications

Parameter Value
Manufacturer DIYI Elec Tech
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum repetitive peak reverse voltage VRRM 100 V 1
Maximum average forward rectified current (per diode) IF(AV) 10 A per diode 1
Maximum average forward rectified current (per device) IF(AV) 5 A per device 1
Peak forward surge current IFSM 80 A 8.3ms single half sine-wave superimposed on rated load, per diode 1
Operating junction temperature range TJ -55 150 °C 1
Storage temperature range TSTG -55 150 °C 1
Maximum rms voltage VRMS 70 V 1
Breakdown voltage per diode VBR 100 V IR=0.5mA 2
Instantaneous forward voltage per diode, TJ=25°C, IF=1A VF 0.45 V IF=1A, TJ=25°C 2
Instantaneous forward voltage per diode, TJ=25°C, IF=2A VF 0.51 V IF=2A, TJ=25°C 2
Instantaneous forward voltage per diode, TJ=25°C, IF=5A VF 0.68 0.75 V IF=5A, TJ=25°C 2
Instantaneous forward voltage per diode, TJ=125°C, IF=1A VF 0.36 V IF=1A, TJ=125°C 2
Instantaneous forward voltage per diode, TJ=125°C, IF=2A VF 0.46 V IF=2A, TJ=125°C 2
Instantaneous forward voltage per diode, TJ=125°C, IF=5A VF 0.62 V IF=5A, TJ=125°C 2
Reverse current per diode IR 1.8 A VR=70V 2
Reverse current per diode, TJ=25°C IR 3 A VR=100V, TJ=25°C 2
Reverse current per diode, TJ=125°C IR 50 mA VR=100V, TJ=125°C 2
Typical thermal resistance per diode RJC 4.5 °C/W per diode, mounted on infinite heatsink (Note 1) 1

CAD (KiCad official)

  • Symbol: SBT10100FCT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: sbt10100fct-etched.step / sbt10100fct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbt10100fct.step / sbt10100fct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DIYI Elec Tech datasheet (4 pp, sha256 e0ac48ec485e9cd4, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF