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SBCW72LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SBCW72LT1G

onsemi · Bipolar Transistors - BJT · SOT-23-3

SBCW72LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor (CASE 318-08 Style 6); VEBO max 5.0 Vdc, V(BR)EBO min 5.0 Vdc.
2 EMITTER passive Emitter of the NPN transistor (CASE 318-08 Style 6); IC continuous max 100 mAdc flows out through this pin.
3 COLLECTOR passive Collector of the NPN transistor (CASE 318-08 Style 6); VCEO max 45 Vdc, VCBO max 50 Vdc, IC continuous max 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 45 Vdc IC = 2.0 mAdc, VEB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 µAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 µAdc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 20 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 µAdc VCB = 20 Vdc, IE = 0, TA = 100°C 2
DC Current Gain hFE 200 450 IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.21 Vdc IC = 10 mAdc, IB = 0.5 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 50 mAdc, IB = 2.5 mAdc 2
Base-Emitter On Voltage VBE(on) 0.6 0.75 Vdc IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Output Capacitance Cobo 4 pF IE = 0, VCB = 10 Vdc, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Base-Emitter Saturation Voltage VBE(sat) 0.85 Vdc IC = 50 mAdc, IB = 2.5 mAdc 2
Current-Gain Bandwidth Product fT 300 MHz IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz 2
Input Capacitance Cibo 9 pF IE = 0, VCB = 10 Vdc, f = 1.0 MHz 2
Collector-Emitter Voltage VCEO 45 Vdc 1
Collector-Base Voltage VCBO 50 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board, TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5) RθJA 556 °C/W FR-5 Board 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate, TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (Alumina) RθJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: SBCW72LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: sbcw72lt1g-etched.step / sbcw72lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbcw72lt1g.step / sbcw72lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 2d374bd819eed00b, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF