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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

SBCW72LT1G

onsemi · Bipolar Transistors - BJT · SOT-23-3

SBCW72LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base of the NPN transistor (CASE 318-08 Style 6); VEBO max 5.0 Vdc, V(BR)EBO min 5.0 Vdc.
2	EMITTER	passive	Emitter of the NPN transistor (CASE 318-08 Style 6); IC continuous max 100 mAdc flows out through this pin.
3	COLLECTOR	passive	Collector of the NPN transistor (CASE 318-08 Style 6); VCEO max 45 Vdc, VCBO max 50 Vdc, IC continuous max 100 mAdc.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-23-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Emitter Breakdown Voltage	V(BR)CEO	45			Vdc	IC = 2.0 mAdc, VEB = 0	2
Collector-Base Breakdown Voltage	V(BR)CBO	50			Vdc	IC = 10 µAdc, IE = 0	2
Emitter-Base Breakdown Voltage	V(BR)EBO	5			Vdc	IE = 10 µAdc, IC = 0	2
Collector Cutoff Current	ICBO			100	nAdc	VCB = 20 Vdc, IE = 0	2
Collector Cutoff Current	ICBO			10	µAdc	VCB = 20 Vdc, IE = 0, TA = 100°C	2
DC Current Gain	hFE	200		450		IC = 2.0 mAdc, VCE = 5.0 Vdc	2
Collector-Emitter Saturation Voltage	VCE(sat)			0.21	Vdc	IC = 10 mAdc, IB = 0.5 mAdc	2
Collector-Emitter Saturation Voltage	VCE(sat)			0.25	Vdc	IC = 50 mAdc, IB = 2.5 mAdc	2
Base-Emitter On Voltage	VBE(on)	0.6		0.75	Vdc	IC = 2.0 mAdc, VCE = 5.0 Vdc	2
Output Capacitance	Cobo			4	pF	IE = 0, VCB = 10 Vdc, f = 1.0 MHz	2
Noise Figure	NF			10	dB	IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz	2
Base-Emitter Saturation Voltage	VBE(sat)		0.85		Vdc	IC = 50 mAdc, IB = 2.5 mAdc	2
Current-Gain Bandwidth Product	fT		300		MHz	IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz	2
Input Capacitance	Cibo		9		pF	IE = 0, VCB = 10 Vdc, f = 1.0 MHz	2
Collector-Emitter Voltage	VCEO			45	Vdc		1
Collector-Base Voltage	VCBO			50	Vdc		1
Emitter-Base Voltage	VEBO			5	Vdc		1
Collector Current - Continuous	IC			100	mAdc		1
Junction and Storage Temperature	TJ, Tstg	-55		150	°C		1
Total Device Dissipation FR-5 Board	PD			225	mW	FR-5 Board, TA = 25°C	1
Thermal Resistance, Junction-to-Ambient (FR-5)	RθJA			556	°C/W	FR-5 Board	1
Total Device Dissipation Alumina Substrate	PD			300	mW	Alumina Substrate, TA = 25°C	1
Thermal Resistance, Junction-to-Ambient (Alumina)	RθJA			417	°C/W	Alumina Substrate	1

CAD (KiCad official)

Symbol: SBCW72LT1G
Footprint: Package_TO_SOT_SMD:SOT-23-3
3D model: SOT-23-3 (KiCad packages3D, STEP)
3D model files: sbcw72lt1g-etched.step / sbcw72lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbcw72lt1g.step / sbcw72lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (8 pp, sha256 2d374bd819eed00b, retrieved 2026-10-23, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF