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SBAS16XV2T1G

Public Made by Adom

by adom

onsemi Switching Diodes, SOD-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SBAS16XV2T1G

onsemi · Switching Diodes · SOD-523

SBAS16XV2T1G from onsemi, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode terminal of the switching diode; the device is rated for a continuous reverse voltage (VR) of 100 V and a continuous forward current (IF) of 200 mA.
2 ANODE passive Anode terminal of the switching diode; forward current through the device is limited to 200 mA continuous (IF) and 500 mA peak forward surge (IFM(surge)).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOD-523
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage Leakage Current (VR = 100 V) IR 1 μA VR = 100 V 2
Reverse Voltage Leakage Current (VR = 75 V, TJ = 150°C) IR 50 μA VR = 75 V, TJ = 150°C 2
Reverse Voltage Leakage Current (VR = 25 V, TJ = 150°C) IR 30 μA VR = 25 V, TJ = 150°C 2
Reverse Breakdown Voltage V(BR) 100 V IBR = 100 μA 2
Forward Voltage VF 715 mV IF = 1.0 mA 2
Forward Voltage VF 855 mV IF = 10 mA 2
Forward Voltage VF 1000 mV IF = 50 mA 2
Forward Voltage VF 1250 mV IF = 150 mA 2
Diode Capacitance CD 2 pF VR = 0, f = 1.0 MHz 2
Forward Recovery Voltage VFR 1.75 V IF = 10 mA, tr = 20 ns 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mA, RL = 50 Ω 2
Stored Charge QS 45 pC IF = 10 mA to VR = 5.0 V, RL = 500 Ω 2
Continuous Reverse Voltage VR 100 V 1
Continuous Forward Current IF 200 mA 1
Peak Forward Surge Current IFM(surge) 500 mA 1
Repetitive Peak Forward Current IFRM 500 mA Pulse Wave = 1 sec, Duty Cycle = 66% 1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM 4 A t = 1 s (as printed; see review_required) 1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM 1 A t = 1 ms, TJ = 25°C prior to surge 1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM 0.5 A t = 1 s, TJ = 25°C prior to surge 1
Total Device Dissipation PD 200 mW TA = 25°C, FR-5 minimum pad (Note 1) 1
Derate above 25°C 1.57 mW/°C Derate above 25°C 1
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W Note 1: FR-5 minimum pad 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: SBAS16XV2T1G
  • Footprint: Diode_SMD:D_SOD-523
  • 3D model: SOD-523 (KiCad packages3D, STEP)
  • 3D model files: sbas16xv2t1g-etched.step / sbas16xv2t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbas16xv2t1g.step / sbas16xv2t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 0a75a2cc5765c1d9, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF