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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

SBAS16XV2T1G

onsemi · Switching Diodes · SOD-523

SBAS16XV2T1G from onsemi, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	CATHODE	passive	Cathode terminal of the switching diode; the device is rated for a continuous reverse voltage (VR) of 100 V and a continuous forward current (IF) of 200 mA.
2	ANODE	passive	Anode terminal of the switching diode; forward current through the device is limited to 200 mA continuous (IF) and 500 mA peak forward surge (IFM(surge)).

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOD-523
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Reverse Voltage Leakage Current (VR = 100 V)	IR		1	μA	VR = 100 V	2
Reverse Voltage Leakage Current (VR = 75 V, TJ = 150°C)	IR		50	μA	VR = 75 V, TJ = 150°C	2
Reverse Voltage Leakage Current (VR = 25 V, TJ = 150°C)	IR		30	μA	VR = 25 V, TJ = 150°C	2
Reverse Breakdown Voltage	V(BR)	100		V	IBR = 100 μA	2
Forward Voltage	VF		715	mV	IF = 1.0 mA	2
Forward Voltage	VF		855	mV	IF = 10 mA	2
Forward Voltage	VF		1000	mV	IF = 50 mA	2
Forward Voltage	VF		1250	mV	IF = 150 mA	2
Diode Capacitance	CD		2	pF	VR = 0, f = 1.0 MHz	2
Forward Recovery Voltage	VFR		1.75	V	IF = 10 mA, tr = 20 ns	2
Reverse Recovery Time	trr		6	ns	IF = IR = 10 mA, RL = 50 Ω	2
Stored Charge	QS		45	pC	IF = 10 mA to VR = 5.0 V, RL = 500 Ω	2
Continuous Reverse Voltage	VR		100	V		1
Continuous Forward Current	IF		200	mA		1
Peak Forward Surge Current	IFM(surge)		500	mA		1
Repetitive Peak Forward Current	IFRM		500	mA	Pulse Wave = 1 sec, Duty Cycle = 66%	1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge)	IFSM		4	A	t = 1 s (as printed; see review_required)	1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge)	IFSM		1	A	t = 1 ms, TJ = 25°C prior to surge	1
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge)	IFSM		0.5	A	t = 1 s, TJ = 25°C prior to surge	1
Total Device Dissipation	PD		200	mW	TA = 25°C, FR-5 minimum pad (Note 1)	1
Derate above 25°C			1.57	mW/°C	Derate above 25°C	1
Thermal Resistance, Junction-to-Ambient	RθJA		635	°C/W	Note 1: FR-5 minimum pad	1
Junction and Storage Temperature	TJ, Tstg	-55	150	°C		1

CAD (KiCad official)

Symbol: SBAS16XV2T1G
Footprint: Diode_SMD:D_SOD-523
3D model: SOD-523 (KiCad packages3D, STEP)
3D model files: sbas16xv2t1g-etched.step / sbas16xv2t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbas16xv2t1g.step / sbas16xv2t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (4 pp, sha256 0a75a2cc5765c1d9, retrieved 2026-10-14, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF