# S8550-L

**Yangzhou Yangjie Elec Tech** · Bipolar (BJT) · SOT-23(TO-236)

S8550-L from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO limit is -5 V and IEBO max is -100 nA at VEB=-5 V. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage rating is -5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -40 V, VCEO -25 V, IC max -500 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO |  |  | -40 | V | IC=-100uA,IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO |  |  | -25 | V | IC =-100uA,IB=0 | 1 |
| Emitter-base breakdown voltage | VEBO |  |  | -5 | V | IE=-100μA,IC=0 | 1 |
| Collector-Emitter cut-off current | ICEX |  |  | -100 | nA | VCE=-20V, VBE=-3V | 1 |
| Collector-base cut-off current | ICBO |  |  | -100 | nA | VCB=-40V, IE=0 | 1 |
| Emitter-base cut-off current | IEBO |  |  | -100 | nA | VEB=-5V, IC =0 | 1 |
| DC current gain (1), rank L | hFE(1) | 120 |  | 200 |  | VCE=-1V,IC=-50mA; rank L range 120-200 | 2 |
| DC current gain (2) | hFE(2) | 50 |  |  |  | VCE=-1V,IC=-500mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.6 | V | IC=-500mA,IB=-50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.2 | V | IC=-500mA,IB=-50mA | 1 |
| Transition frequency | fT | 150 |  |  | MHz | VCE=-6V,IC=-20mA,f=30MHz | 1 |
| Collector-Base Voltage | VCBO |  |  | -40 | V | IC=-100uAdc, IE=0 | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -25 | V | IC=-100uAdc, IB=0 | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V | IE=-100uAdc, IC=0 | 1 |
| Collector Current | IC |  |  | -500 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 300 | mW |  | 1 |
| Operation Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance From Junction To Ambient | RθJA |  | 417 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `S8550-L`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `s8550-l-etched.step` / `s8550-l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s8550-l.step` / `s8550-l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/s8550-l-datasheet.pdf) (4 pp, sha256 `1c0ddbb664957ba0`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/s8550-l-datasheet.pdf)