component
S8550-L
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
| s8550-l-etched.glb | 10d ago |
| s8550-l-etched.step | 10d ago |
| s8550-l-hero.glb | 10d ago |
| s8550-l-hero.overlay.json | 10d ago |
| s8550-l.glb | 10d ago |
| s8550-l.kicad_mod | 10d ago |
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| s8550-l.lbr | 10d ago |
| s8550-l.step | 10d ago |
S8550-L
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23(TO-236)
S8550-L from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO limit is -5 V and IEBO max is -100 nA at VEB=-5 V. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage rating is -5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -40 V, VCEO -25 V, IC max -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | -40 | V | IC=-100uA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | -25 | V | IC =-100uA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE=-100μA,IC=0 | 1 | ||
| Collector-Emitter cut-off current | ICEX | -100 | nA | VCE=-20V, VBE=-3V | 1 | ||
| Collector-base cut-off current | ICBO | -100 | nA | VCB=-40V, IE=0 | 1 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB=-5V, IC =0 | 1 | ||
| DC current gain (1), rank L | hFE(1) | 120 | 200 | VCE=-1V,IC=-50mA; rank L range 120-200 | 2 | ||
| DC current gain (2) | hFE(2) | 50 | VCE=-1V,IC=-500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mA,IB=-50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mA,IB=-50mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=-6V,IC=-20mA,f=30MHz | 1 | ||
| Collector-Base Voltage | VCBO | -40 | V | IC=-100uAdc, IE=0 | 1 | ||
| Collector-Emitter Voltage | VCEO | -25 | V | IC=-100uAdc, IB=0 | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | IE=-100uAdc, IC=0 | 1 | ||
| Collector Current | IC | -500 | mA | 1 | |||
| Collector Power Dissipation | PC | 300 | mW | 1 | |||
| Operation Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
S8550-L - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
s8550-l-etched.step/s8550-l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8550-l.step/s8550-l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (4 pp, sha256
1c0ddbb664957ba0, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).