# S80P06

**HL** · MOSFETs · TO-252

S80P06 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -60 V (VDS) and continuous drain current is -80 A at TC=25°C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the body diode forward current is rated -80 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -80 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | -50 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | -320 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 450 | mJ |  | 1 |
| Power Dissipation | PD |  |  | 110 | W | TC = 25℃ | 1 |
| Operating junction temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage temperature | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 300 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.1 | ℃/W |  | 2 |
| Thermal resistance, junction, Ambient | RθJA |  |  | 60 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Gate-body Leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = -60V, VGS = 0V | 2 |
| Gate-Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS =VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 9 | 11 | mΩ | VGS = -10V, ID = -20A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 12 | 16 | mΩ | VGS = -4.5V, ID = -15A | 2 |
| Forward Trans-conductance | gfs | 50 |  |  | S | VDS = -5V, ID = -20A | 2 |
| Diode Forward Current | IS |  |  | -80 | A | TC=25℃ | 2 |
| Diode Pulse Current | ISM |  |  | -320 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS=-6.0A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `S80P06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `s80p06-etched.step` / `s80p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s80p06.step` / `s80p06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604441388964724736) (7 pp, sha256 `e13461cabd24cdb5`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/s80p06-datasheet.pdf)