component
S80P06
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| s80p06-etched.glb | 17d ago |
| s80p06-etched.step | 17d ago |
| s80p06-hero.glb | 17d ago |
| s80p06-hero.overlay.json | 17d ago |
| s80p06.glb | 17d ago |
| s80p06.kicad_mod | 17d ago |
| s80p06.kicad_sym | 17d ago |
| s80p06.lbr | 17d ago |
| s80p06.step | 17d ago |
S80P06
HL · MOSFETs · TO-252
S80P06 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -60 V (VDS) and continuous drain current is -80 A at TC=25°C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the body diode forward current is rated -80 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -80 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -50 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 450 | mJ | 1 | |||
| Power Dissipation | PD | 110 | W | TC = 25℃ | 1 | ||
| Operating junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.1 | ℃/W | 2 | |||
| Thermal resistance, junction, Ambient | RθJA | 60 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body Leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = -60V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS =VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 9 | 11 | mΩ | VGS = -10V, ID = -20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 12 | 16 | mΩ | VGS = -4.5V, ID = -15A | 2 | |
| Forward Trans-conductance | gfs | 50 | S | VDS = -5V, ID = -20A | 2 | ||
| Diode Forward Current | IS | -80 | A | TC=25℃ | 2 | ||
| Diode Pulse Current | ISM | -320 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-6.0A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
S80P06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
s80p06-etched.step/s80p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s80p06.step/s80p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (7 pp, sha256
e13461cabd24cdb5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).