# S8050-HQ

**Yangzhou Yangjie Elec Tech** · Bipolar Transistors - BJT · SOT-23(TO-236)

S8050-HQ from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base breakdown voltage is 5 V minimum and the maximum emitter-base voltage is 5 V. |
| 2 | E | passive | Emitter of the NPN transistor; connects to the load return or ground in common-emitter use. |
| 3 | C | passive | Collector of the NPN transistor; maximum collector current is 500 mA, VCEO is 25 V and VCBO is 40 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage (abs max) | VCBO |  |  | 40 | V | Ta=25℃ | 1 |
| Collector-Emitter Voltage (abs max) | VCEO |  |  | 25 | V | Ta=25℃ | 1 |
| Emitter-Base Voltage (abs max) | VEBO |  |  | 5 | V | Ta=25℃ | 1 |
| Collector Current | IC |  |  | 500 | mA | Ta=25℃ | 1 |
| Collector Power Dissipation | PC |  |  | 300 | mW | Ta=25℃ | 1 |
| Operation Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | VCBO | 40 |  |  | V | IC=100uA,IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO | 25 |  |  | V | IC =100uA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA,IC=0 | 1 |
| Collector-Emitter cut-off current | ICEX |  |  | 100 | nA | VCE=20V, VBE=3V | 1 |
| Collector-base cut-off current | ICBO |  |  | 100 | nA | VCB=40V, IE=0 | 1 |
| Emitter-base cut-off current | IEBO |  |  | 100 | nA | VEB=5V, IC =0 | 1 |
| DC current gain (H rank) | hFE(1) | 200 |  | 350 |  | VCE=1V,IC=50mA | 2 |
| DC current gain | hFE(2) | 50 |  |  |  | VCE=1V,IC=500mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.6 | V | IC=500mA,IB=50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=500mA,IB=50mA | 1 |
| Transition frequency | fT | 150 |  |  | MHz | VCE=6V,IC=20mA,f=30MHz | 1 |

## CAD (KiCad official)

- Symbol: `S8050-HQ`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `s8050-hq-etched.step` / `s8050-hq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s8050-hq.step` / `s8050-hq.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/s8050-hq-datasheet.pdf) (4 pp, sha256 `8574bf8af8039061`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/s8050-hq-datasheet.pdf)