component
S8050-HQ
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar Transistors - BJT, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownS8050-HQ
Yangzhou Yangjie Elec Tech · Bipolar Transistors - BJT · SOT-23(TO-236)
S8050-HQ from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base breakdown voltage is 5 V minimum and the maximum emitter-base voltage is 5 V. |
| 2 | E | passive | Emitter of the NPN transistor; connects to the load return or ground in common-emitter use. |
| 3 | C | passive | Collector of the NPN transistor; maximum collector current is 500 mA, VCEO is 25 V and VCBO is 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage (abs max) | VCBO | 40 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage (abs max) | VCEO | 25 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage (abs max) | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector Current | IC | 500 | mA | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 300 | mW | Ta=25℃ | 1 | ||
| Operation Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | VCBO | 40 | V | IC=100uA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | 25 | V | IC =100uA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA,IC=0 | 1 | ||
| Collector-Emitter cut-off current | ICEX | 100 | nA | VCE=20V, VBE=3V | 1 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB=40V, IE=0 | 1 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB=5V, IC =0 | 1 | ||
| DC current gain (H rank) | hFE(1) | 200 | 350 | VCE=1V,IC=50mA | 2 | ||
| DC current gain | hFE(2) | 50 | VCE=1V,IC=500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=500mA,IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mA,IB=50mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=6V,IC=20mA,f=30MHz | 1 |
CAD (KiCad official)
- Symbol:
S8050-HQ - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
s8050-hq-etched.step/s8050-hq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8050-hq.step/s8050-hq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (4 pp, sha256
8574bf8af8039061, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).