component
S60N04F
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HL MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S60N04F
HL · MOSFETs · DFN-8(5x6)
S60N04F from HL, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 2 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 3 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 4 | G | input | Gate pin of the N-channel MOSFET with a gate-source voltage rating of ±20V and a threshold voltage of 1.35V to 3V. |
| 5 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 6 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 7 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 8 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6.9 | 8.5 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 15 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Continuous Source Current | IS | 60 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 60 | A | @T=25℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Continuous Drain Current | ID | 35 | A | @T=100℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Pulsed Drain Current | IDM | 130 | A | note 2: pulse width ≤300us, duty cycle ≤2% | 1 | ||
| Single Pulse Avalanche Energy | EAS | 48 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=31A (note 3) | 1 | ||
| Avalanche Current | IAS | 35 | A | 1 | |||
| Total Power Dissipation | PD | 39 | W | @T=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | Steady-State; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.2 | ℃/W | note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
S60N04F - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
s60n04f-etched.step/s60n04f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s60n04f.step/s60n04f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
cb5fbb8d5ffb8615, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S60N04F
**HL** · MOSFETs · DFN-8(5x6)
S60N04F from HL, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 2 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 3 | S | passive | Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A. |
| 4 | G | input | Gate pin of the N-channel MOSFET with a gate-source voltage rating of ±20V and a threshold voltage of 1.35V to 3V. |
| 5 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 6 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 7 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 8 | D | passive | Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.9 | 8.5 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 15 | mΩ | VGS=4.5V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 | | 3 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 60 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 60 | A | @T=25℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Continuous Drain Current | ID | | | 35 | A | @T=100℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Pulsed Drain Current | IDM | | | 130 | A | note 2: pulse width ≤300us, duty cycle ≤2% | 1 |
| Single Pulse Avalanche Energy | EAS | | | 48 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=31A (note 3) | 1 |
| Avalanche Current | IAS | | | 35 | A | | 1 |
| Total Power Dissipation | PD | | | 39 | W | @T=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 60 | ℃/W | Steady-State; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 3.2 | ℃/W | note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
## CAD (KiCad official)
- Symbol: `S60N04F`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `s60n04f-etched.step` / `s60n04f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s60n04f.step` / `s60n04f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603006228024860672) (5 pp, sha256 `cb5fbb8d5ffb8615`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s60n04f-datasheet.pdf)