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Contents

README

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S60N04F

HL · MOSFETs · DFN-8(5x6)

S60N04F from HL, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A.
2 S passive Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A.
3 S passive Source pin of the N-channel MOSFET (shown as S on the PDFN5X6 pin configuration), with continuous source current of 60A.
4 G input Gate pin of the N-channel MOSFET with a gate-source voltage rating of ±20V and a threshold voltage of 1.35V to 3V.
5 D passive Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C.
6 D passive Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C.
7 D passive Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C.
8 D passive Drain pin of the N-channel MOSFET, rated 40V drain-source and 60A continuous drain current at TC=25°C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HL
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 6.9 8.5 mΩ VGS=10V, ID=12A 2
Static Drain-Source On-Resistance RDS(ON) 10 15 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.35 3 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS=20V, VDS=0V 2
Continuous Source Current IS 60 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 60 A @T=25℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Continuous Drain Current ID 35 A @T=100℃; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Pulsed Drain Current IDM 130 A note 2: pulse width ≤300us, duty cycle ≤2% 1
Single Pulse Avalanche Energy EAS 48 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=31A (note 3) 1
Avalanche Current IAS 35 A 1
Total Power Dissipation PD 39 W @T=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 60 ℃/W Steady-State; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 3.2 ℃/W note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1

CAD (KiCad official)

  • Symbol: S60N04F
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: s60n04f-etched.step / s60n04f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s60n04f.step / s60n04f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 cb5fbb8d5ffb8615, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF