component
S33 SI2333
Public Made by Adomby adom
GOODWORK MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S33 SI2333
GOODWORK · MOSFETs · SOT-23
S33 SI2333 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±12 V (VDS=0V) in the absolute maximum ratings. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET, with drain-source voltage rated at -18 V (VGS=0V) in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -18 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -7 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID | -4.5 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 28.4 | A | Pulsed (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.6 | W | TA=100℃ | 1 | ||
| Avalanche energy | EAS | 42 | mJ | Note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -18 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-12V, VGS=0V TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=-12 V GS=0V TJ=125℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 19 | 25 | mΩ | VGS=-4.5V, ID=-7A TJ=25℃ | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 24 | 30 | mΩ | VGS=-2.5V, ID=-5A TJ=25℃ | 2 | |
| Forward on Voltage | VSD | -1.2 | V | VGS=0V, IS=-3A | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 79 | ℃/W | 1 | |||
| Forward Transconductance | gFS | 11.5 | S | VDS=-5V, ID=-3A | 2 | ||
| Input Capacitance | Ciss | 1330 | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 252 | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 224 | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 | ||
| Gate resistance | Rg | 6.4 | Ω | VGS=0V, VDS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 25 | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 45 | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 71 | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 60 | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 15 | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 | ||
| Gate-Source Charge | Qgs | 1.4 | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 | ||
| Source-Drain Current (Body Diode) | ISD | -7 | A | 2 | |||
| Reverse Recovery Time | trr | 18 | ns | IF=-3A, dI/dt=100A/s | 2 | ||
| Reverse Recovery Charge | Qrr | 7 | nC | IF=-3A, dI/dt=100A/s | 2 |
CAD (KiCad official)
- Symbol:
S33 SI2333 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s33-si2333-etched.step/s33-si2333-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s33-si2333.step/s33-si2333.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (6 pp, sha256
2468b447ad3a0821, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S33 SI2333
**GOODWORK** · MOSFETs · SOT-23
S33 SI2333 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±12 V (VDS=0V) in the absolute maximum ratings. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET, with drain-source voltage rated at -18 V (VGS=0V) in the absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -18 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | -7 | A | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | -4.5 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM | | | 28.4 | A | Pulsed (Note 1) | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.6 | W | TA=100℃ | 1 |
| Avalanche energy | EAS | | | 42 | mJ | Note 2 | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -18 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-12V, VGS=0V TJ=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS=-12 V GS=0V TJ=125℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | | -1 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 19 | 25 | mΩ | VGS=-4.5V, ID=-7A TJ=25℃ | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 24 | 30 | mΩ | VGS=-2.5V, ID=-5A TJ=25℃ | 2 |
| Forward on Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-3A | 2 |
| Thermal Resistance, Junction-to-Ambient | RJA | | 79 | | ℃/W | | 1 |
| Forward Transconductance | gFS | | 11.5 | | S | VDS=-5V, ID=-3A | 2 |
| Input Capacitance | Ciss | | 1330 | | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 252 | | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 224 | | pF | VDS=-6V,VGS=0V, f=1.0MHz | 2 |
| Gate resistance | Rg | | 6.4 | | Ω | VGS=0V, VDS=0V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 25 | | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 45 | | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 71 | | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 60 | | nS | VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω | 2 |
| Total Gate Charge | Qg | | 15 | | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 |
| Gate-Source Charge | Qgs | | 1.4 | | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 |
| Gate-Drain Charge | Qgd | | 3.2 | | nC | VGS=-4.5V, VDS=-6V, ID=-3A | 2 |
| Source-Drain Current (Body Diode) | ISD | | -7 | | A | | 2 |
| Reverse Recovery Time | trr | | 18 | | ns | IF=-3A, dI/dt=100A/s | 2 |
| Reverse Recovery Charge | Qrr | | 7 | | nC | IF=-3A, dI/dt=100A/s | 2 |
## CAD (KiCad official)
- Symbol: `S33 SI2333`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `s33-si2333-etched.step` / `s33-si2333-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s33-si2333.step` / `s33-si2333.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](docs/s33-si2333-datasheet.pdf) (6 pp, sha256 `2468b447ad3a0821`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s33-si2333-datasheet.pdf)