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S33 SI2333

Public Made by Adom

by adom

GOODWORK MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S33 SI2333

GOODWORK · MOSFETs · SOT-23

S33 SI2333 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±12 V (VDS=0V) in the absolute maximum ratings.
2 SOURCE passive Source terminal of the P-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings.
3 DRAIN passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated at -18 V (VGS=0V) in the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -18 V VGS=0V 1
Gate-Source Voltage VGS -12 12 V VDS=0V 1
Drain Current-Continuous ID -7 A TA=25℃ 1
Drain Current-Continuous ID -4.5 A TA=100℃ 1
Drain Current-Pulsed IDM 28.4 A Pulsed (Note 1) 1
Maximum Power Dissipation PD 1.6 W TA=25℃ 1
Maximum Power Dissipation PD 0.6 W TA=100℃ 1
Avalanche energy EAS 42 mJ Note 2 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -18 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-12V, VGS=0V TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=-12 V GS=0V TJ=125℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) -0.5 -1 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 19 25 mΩ VGS=-4.5V, ID=-7A TJ=25℃ 2
Drain-Source On-State Resistance RDS(ON) 24 30 mΩ VGS=-2.5V, ID=-5A TJ=25℃ 2
Forward on Voltage VSD -1.2 V VGS=0V, IS=-3A 2
Thermal Resistance, Junction-to-Ambient RJA 79 ℃/W 1
Forward Transconductance gFS 11.5 S VDS=-5V, ID=-3A 2
Input Capacitance Ciss 1330 pF VDS=-6V,VGS=0V, f=1.0MHz 2
Output Capacitance Coss 252 pF VDS=-6V,VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 224 pF VDS=-6V,VGS=0V, f=1.0MHz 2
Gate resistance Rg 6.4 Ω VGS=0V, VDS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 25 nS VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω 2
Turn-on Rise Time tr 45 nS VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω 2
Turn-Off Delay Time td(off) 71 nS VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 60 nS VGS=-4.5V, VDS=-6V, RL=2Ω, RGEN=3Ω 2
Total Gate Charge Qg 15 nC VGS=-4.5V, VDS=-6V, ID=-3A 2
Gate-Source Charge Qgs 1.4 nC VGS=-4.5V, VDS=-6V, ID=-3A 2
Gate-Drain Charge Qgd 3.2 nC VGS=-4.5V, VDS=-6V, ID=-3A 2
Source-Drain Current (Body Diode) ISD -7 A 2
Reverse Recovery Time trr 18 ns IF=-3A, dI/dt=100A/s 2
Reverse Recovery Charge Qrr 7 nC IF=-3A, dI/dt=100A/s 2

CAD (KiCad official)

  • Symbol: S33 SI2333
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s33-si2333-etched.step / s33-si2333-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s33-si2333.step / s33-si2333.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (6 pp, sha256 2468b447ad3a0821, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF