component
S-LMBT4401WT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S-LMBT4401WT1G
LRC · Bipolar (BJT) · SOT-323
S-LMBT4401WT1G from LRC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN general-purpose transistor; the datasheet's absolute maximum ratings are VEBO 6 V and IC 600 mA continuous for the device. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet gives a collector-emitter voltage limit VCEO of 40 V and an emitter-base voltage limit VEBO of 6 V. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the datasheet gives a collector-base voltage limit VCBO of 60 V and a continuous collector current IC of 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 40 | V | IC = 1.0 mA, IB = 0 | 1 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | 60 | V | IC = 0.1 mA, IE = 0 | 1 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | 6 | V | IE = 0.1 mA, IC = 0 | 1 | ||
| Collector Cutoff Current | ICEX | 0.1 | μA | VCE = 35 V, VEB = 0.4V | 1 | ||
| Base Cutoff Current | IBEV | 0.1 | μA | VCE = 35 V, VEB = 0.4V | 1 | ||
| DC Current Gain | HFE | 20 | IC = 0.1 mA, VCE = 1.0 V | 2 | |||
| DC Current Gain | HFE | 40 | IC = 1.0 mA, VCE = 1.0 V | 2 | |||
| DC Current Gain | HFE | 80 | IC = 10 mA, VCE = 1.0 V | 2 | |||
| DC Current Gain | HFE | 100 | 300 | IC = 150 mA, VCE = 1.0 V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | V | IC = 150 mA, IB = 15 mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | 0.95 | V | IC = 150 mA, IB = 15 mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Current-Gain, Bandwidth Product | fT | 250 | MHz | IC = 20 mA, VCE = 10 V, f = 100 MHz | 2 | ||
| Collector-Base Capacitance | Ccb | 6.5 | pF | VCB = 5.0 V, IE = 0, f = 1.0 MHz | 2 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VEB = 0.5 V, IC = 0, f = 1.0 MHz | 2 | ||
| Input Impedance | hie | 1 | 15 | KΩ | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X10-4 | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 | |
| Small-Signal Current Gain | hfe | 40 | 500 | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 | ||
| Output Admittance | hoe | 1 | 30 | µmhos | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 | |
| Storage Time | ts | 225 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 2 | ||
| Fall Time | tf | 30 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 2 | ||
| Delay Time | td | 15 | ns | VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA | 2 | ||
| Rise Time | tr | 20 | ns | VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA | 2 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | Ta = 25ºC | 1 | ||
| Collector-Base Voltage | VCBO | 60 | V | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | V | Ta = 25ºC | 1 | ||
| Collector Current, Continuous | IC | 600 | mA | Ta = 25ºC | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 150 | mW | FR-5 board (Note 1) @ TA = 25ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 833 | ºC/W | FR-5 board (Note 1) | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 1 |
CAD (KiCad official)
- Symbol:
S-LMBT4401WT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
s-lmbt4401wt1g-etched.step/s-lmbt4401wt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbt4401wt1g.step/s-lmbt4401wt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
e9d4aa41e734de58, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S-LMBT4401WT1G
**LRC** · Bipolar (BJT) · SOT-323
S-LMBT4401WT1G from LRC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN general-purpose transistor; the datasheet's absolute maximum ratings are VEBO 6 V and IC 600 mA continuous for the device. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet gives a collector-emitter voltage limit VCEO of 40 V and an emitter-base voltage limit VEBO of 6 V. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the datasheet gives a collector-base voltage limit VCBO of 60 V and a continuous collector current IC of 600 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 40 | | | V | IC = 1.0 mA, IB = 0 | 1 |
| Collector-Base Breakdown Voltage | VBR(CBO) | 60 | | | V | IC = 0.1 mA, IE = 0 | 1 |
| Emitter-Base Breakdown Voltage | VBR(EBO) | 6 | | | V | IE = 0.1 mA, IC = 0 | 1 |
| Collector Cutoff Current | ICEX | | | 0.1 | μA | VCE = 35 V, VEB = 0.4V | 1 |
| Base Cutoff Current | IBEV | | | 0.1 | μA | VCE = 35 V, VEB = 0.4V | 1 |
| DC Current Gain | HFE | 20 | | | | IC = 0.1 mA, VCE = 1.0 V | 2 |
| DC Current Gain | HFE | 40 | | | | IC = 1.0 mA, VCE = 1.0 V | 2 |
| DC Current Gain | HFE | 80 | | | | IC = 10 mA, VCE = 1.0 V | 2 |
| DC Current Gain | HFE | 100 | | 300 | | IC = 150 mA, VCE = 1.0 V | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.4 | V | IC = 150 mA, IB = 15 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.75 | V | IC = 500 mA, IB = 50 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | | 0.95 | V | IC = 150 mA, IB = 15 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 1.2 | V | IC = 500 mA, IB = 50 mA | 2 |
| Current-Gain, Bandwidth Product | fT | 250 | | | MHz | IC = 20 mA, VCE = 10 V, f = 100 MHz | 2 |
| Collector-Base Capacitance | Ccb | | | 6.5 | pF | VCB = 5.0 V, IE = 0, f = 1.0 MHz | 2 |
| Emitter-Base Capacitance | Ceb | | | 30 | pF | VEB = 0.5 V, IC = 0, f = 1.0 MHz | 2 |
| Input Impedance | hie | 1 | | 15 | KΩ | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | hre | 0.1 | | 8 | X10-4 | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 |
| Small-Signal Current Gain | hfe | 40 | | 500 | | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 |
| Output Admittance | hoe | 1 | | 30 | µmhos | VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | 2 |
| Storage Time | ts | | | 225 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 2 |
| Fall Time | tf | | | 30 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 2 |
| Delay Time | td | | | 15 | ns | VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA | 2 |
| Rise Time | tr | | | 20 | ns | VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA | 2 |
| Collector-Emitter Voltage | VCEO | | | 40 | V | Ta = 25ºC | 1 |
| Collector-Base Voltage | VCBO | | | 60 | V | Ta = 25ºC | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | Ta = 25ºC | 1 |
| Collector Current, Continuous | IC | | | 600 | mA | Ta = 25ºC | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 150 | mW | FR-5 board (Note 1) @ TA = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 833 | ºC/W | FR-5 board (Note 1) | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
## CAD (KiCad official)
- Symbol: `S-LMBT4401WT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `s-lmbt4401wt1g-etched.step` / `s-lmbt4401wt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s-lmbt4401wt1g.step` / `s-lmbt4401wt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590223725728591872) (5 pp, sha256 `e9d4aa41e734de58`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s-lmbt4401wt1g-datasheet.pdf)