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Contents

README

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S-LMBT4401WT1G

LRC · Bipolar (BJT) · SOT-323

S-LMBT4401WT1G from LRC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN general-purpose transistor; the datasheet's absolute maximum ratings are VEBO 6 V and IC 600 mA continuous for the device.
2 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives a collector-emitter voltage limit VCEO of 40 V and an emitter-base voltage limit VEBO of 6 V.
3 Collector passive Collector terminal of the NPN transistor; the datasheet gives a collector-base voltage limit VCBO of 60 V and a continuous collector current IC of 600 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage VBR(CEO) 40 V IC = 1.0 mA, IB = 0 1
Collector-Base Breakdown Voltage VBR(CBO) 60 V IC = 0.1 mA, IE = 0 1
Emitter-Base Breakdown Voltage VBR(EBO) 6 V IE = 0.1 mA, IC = 0 1
Collector Cutoff Current ICEX 0.1 μA VCE = 35 V, VEB = 0.4V 1
Base Cutoff Current IBEV 0.1 μA VCE = 35 V, VEB = 0.4V 1
DC Current Gain HFE 20 IC = 0.1 mA, VCE = 1.0 V 2
DC Current Gain HFE 40 IC = 1.0 mA, VCE = 1.0 V 2
DC Current Gain HFE 80 IC = 10 mA, VCE = 1.0 V 2
DC Current Gain HFE 100 300 IC = 150 mA, VCE = 1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC = 150 mA, IB = 15 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.75 V IC = 500 mA, IB = 50 mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 V IC = 150 mA, IB = 15 mA 2
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC = 500 mA, IB = 50 mA 2
Current-Gain, Bandwidth Product fT 250 MHz IC = 20 mA, VCE = 10 V, f = 100 MHz 2
Collector-Base Capacitance Ccb 6.5 pF VCB = 5.0 V, IE = 0, f = 1.0 MHz 2
Emitter-Base Capacitance Ceb 30 pF VEB = 0.5 V, IC = 0, f = 1.0 MHz 2
Input Impedance hie 1 15 KΩ VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 8 X10-4 VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 2
Small-Signal Current Gain hfe 40 500 VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 2
Output Admittance hoe 1 30 µmhos VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 2
Storage Time ts 225 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 2
Fall Time tf 30 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 2
Delay Time td 15 ns VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA 2
Rise Time tr 20 ns VCC = 30 V, VEB = 2.0 V, IC = 150 mA, IB1 = 15 mA 2
Collector-Emitter Voltage VCEO 40 V Ta = 25ºC 1
Collector-Base Voltage VCBO 60 V Ta = 25ºC 1
Emitter-Base Voltage VEBO 6 V Ta = 25ºC 1
Collector Current, Continuous IC 600 mA Ta = 25ºC 1
Total Device Dissipation, FR-5 Board PD 150 mW FR-5 board (Note 1) @ TA = 25ºC 1
Thermal Resistance, Junction-to-Ambient RθJA 833 ºC/W FR-5 board (Note 1) 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1

CAD (KiCad official)

  • Symbol: S-LMBT4401WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: s-lmbt4401wt1g-etched.step / s-lmbt4401wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbt4401wt1g.step / s-lmbt4401wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 e9d4aa41e734de58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF