component
S-LMBT3906LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S-LMBT3906LT1G
LRC · Bipolar (BJT) · SOT-23
S-LMBT3906LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the general-purpose PNP transistor; the datasheet gives no per-pin limit, so device ratings apply (VEBO -5 Vdc, continuous IC -200 mAdc). |
| 2 | EMITTER | passive | Emitter terminal of the transistor; emitter-base voltage is rated VEBO -5 Vdc and continuous collector current IC -200 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the transistor; rated VCEO -40 Vdc and VCBO -40 Vdc, with continuous collector current IC -200 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -40 | V | IC = -1.0 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | -40 | V | IC = -10 μAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | -5 | V | IE = -10 μAdc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICEX | -50 | nA | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 | ||
| Base Cutoff Current | IBL | -50 | nA | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 | ||
| DC Current Gain | HFE | 60 | IC = -0.1 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | HFE | 80 | IC = -1.0 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | HFE | 100 | 300 | IC = -10 mAdc, VCE = -1.0 Vdc | 2 | ||
| DC Current Gain | HFE | 30 | IC = -100 mAdc, VCE = -1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | V | IC = -10 mAdc, IB = -1.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | V | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | V | IC = -10 mAdc, IB = -1.0 mAdc | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | V | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| Current-Gain, Bandwidth Product | fT | 250 | MHz | IC = -10mAdc, VCE = -20Vdc, f = 100MHz | 2 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Input Capacitance | Cibo | 10 | pF | VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Delay Time | td | 35 | ns | VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc | 2 | ||
| Rise Time | tr | 35 | ns | VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc | 2 | ||
| Storage Time | ts | 225 | ns | VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc | 2 | ||
| Fall Time | tf | 75 | ns | VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc | 2 | ||
| Collector-Emitter Voltage | VCEO | -40 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -40 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current, Continuous | IC | -200 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Total Device Dissipation | PD | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | 1.8 | mW/ºC | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 556 | ºC/W | FR-5 Board (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
S-LMBT3906LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s-lmbt3906lt1g-etched.step/s-lmbt3906lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbt3906lt1g.step/s-lmbt3906lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
aa8678e22962fac7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S-LMBT3906LT1G
**LRC** · Bipolar (BJT) · SOT-23
S-LMBT3906LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the general-purpose PNP transistor; the datasheet gives no per-pin limit, so device ratings apply (VEBO -5 Vdc, continuous IC -200 mAdc). |
| 2 | EMITTER | passive | Emitter terminal of the transistor; emitter-base voltage is rated VEBO -5 Vdc and continuous collector current IC -200 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the transistor; rated VCEO -40 Vdc and VCBO -40 Vdc, with continuous collector current IC -200 mAdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -40 | | | V | IC = -1.0 mAdc, IB = 0 | 2 |
| Collector-Base Breakdown Voltage | VBR(CBO) | -40 | | | V | IC = -10 μAdc, IE = 0 | 2 |
| Emitter-Base Breakdown Voltage | VBR(EBO) | -5 | | | V | IE = -10 μAdc, IC = 0 | 2 |
| Collector Cutoff Current | ICEX | | | -50 | nA | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 |
| Base Cutoff Current | IBL | | | -50 | nA | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 |
| DC Current Gain | HFE | 60 | | | | IC = -0.1 mAdc, VCE = -1.0 Vdc | 2 |
| DC Current Gain | HFE | 80 | | | | IC = -1.0 mAdc, VCE = -1.0 Vdc | 2 |
| DC Current Gain | HFE | 100 | | 300 | | IC = -10 mAdc, VCE = -1.0 Vdc | 2 |
| DC Current Gain | HFE | 30 | | | | IC = -100 mAdc, VCE = -1.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.25 | V | IC = -10 mAdc, IB = -1.0 mAdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.4 | V | IC = -50 mAdc, IB = -5.0 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | | -0.85 | V | IC = -10 mAdc, IB = -1.0 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.95 | V | IC = -50 mAdc, IB = -5.0 mAdc | 2 |
| Current-Gain, Bandwidth Product | fT | 250 | | | MHz | IC = -10mAdc, VCE = -20Vdc, f = 100MHz | 2 |
| Output Capacitance | Cobo | | | 4.5 | pF | VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz | 2 |
| Input Capacitance | Cibo | | | 10 | pF | VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz | 2 |
| Delay Time | td | | | 35 | ns | VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc | 2 |
| Rise Time | tr | | | 35 | ns | VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc | 2 |
| Storage Time | ts | | | 225 | ns | VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc | 2 |
| Fall Time | tf | | | 75 | ns | VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc | 2 |
| Collector-Emitter Voltage | VCEO | | | -40 | Vdc | | 1 |
| Collector-Base Voltage | VCBO | | | -40 | Vdc | | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | Vdc | | 1 |
| Collector Current, Continuous | IC | | | -200 | mAdc | | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
| Total Device Dissipation | PD | | | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 |
| Derate above 25ºC | | | 1.8 | | mW/ºC | Derate above 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | 556 | | ºC/W | FR-5 Board (Note 1) | 1 |
## CAD (KiCad official)
- Symbol: `S-LMBT3906LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `s-lmbt3906lt1g-etched.step` / `s-lmbt3906lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s-lmbt3906lt1g.step` / `s-lmbt3906lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589838384098549760) (5 pp, sha256 `aa8678e22962fac7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s-lmbt3906lt1g-datasheet.pdf)