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S-LMBT3906LT1G

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LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LMBT3906LT1G

LRC · Bipolar (BJT) · SOT-23

S-LMBT3906LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the general-purpose PNP transistor; the datasheet gives no per-pin limit, so device ratings apply (VEBO -5 Vdc, continuous IC -200 mAdc).
2 EMITTER passive Emitter terminal of the transistor; emitter-base voltage is rated VEBO -5 Vdc and continuous collector current IC -200 mAdc.
3 COLLECTOR passive Collector terminal of the transistor; rated VCEO -40 Vdc and VCBO -40 Vdc, with continuous collector current IC -200 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage VBR(CEO) -40 V IC = -1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage VBR(CBO) -40 V IC = -10 μAdc, IE = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) -5 V IE = -10 μAdc, IC = 0 2
Collector Cutoff Current ICEX -50 nA VCE = -30 Vdc, VEB = -3.0 Vdc 2
Base Cutoff Current IBL -50 nA VCE = -30 Vdc, VEB = -3.0 Vdc 2
DC Current Gain HFE 60 IC = -0.1 mAdc, VCE = -1.0 Vdc 2
DC Current Gain HFE 80 IC = -1.0 mAdc, VCE = -1.0 Vdc 2
DC Current Gain HFE 100 300 IC = -10 mAdc, VCE = -1.0 Vdc 2
DC Current Gain HFE 30 IC = -100 mAdc, VCE = -1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = -10 mAdc, IB = -1.0 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -50 mAdc, IB = -5.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 V IC = -10 mAdc, IB = -1.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -50 mAdc, IB = -5.0 mAdc 2
Current-Gain, Bandwidth Product fT 250 MHz IC = -10mAdc, VCE = -20Vdc, f = 100MHz 2
Output Capacitance Cobo 4.5 pF VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 10 pF VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz 2
Delay Time td 35 ns VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc 2
Rise Time tr 35 ns VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc 2
Storage Time ts 225 ns VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc 2
Fall Time tf 75 ns VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc 2
Collector-Emitter Voltage VCEO -40 Vdc 1
Collector-Base Voltage VCBO -40 Vdc 1
Emitter-Base Voltage VEBO -5 Vdc 1
Collector Current, Continuous IC -200 mAdc 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1
Total Device Dissipation PD 225 mW FR-5 Board (Note 1) @ TA = 25ºC 1
Derate above 25ºC 1.8 mW/ºC Derate above 25ºC 1
Thermal Resistance, Junction-to-Ambient RΘJA 556 ºC/W FR-5 Board (Note 1) 1

CAD (KiCad official)

  • Symbol: S-LMBT3906LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lmbt3906lt1g-etched.step / s-lmbt3906lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbt3906lt1g.step / s-lmbt3906lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 aa8678e22962fac7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF