# S-L9013QLT1G

**LRC** · Bipolar Transistors - BJT · SOT-23

S-L9013QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives device-level maximum ratings of VEBO 5 V and collector current IC 500 mA, with no separate per-pin limit. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet specifies V(BR)EBO minimum 5 V at IE=100 µA and emitter cutoff current IEBO maximum 150 nA at VEB=4 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives maximum ratings of VCEO 20 V and VCBO 40 V, and collector-emitter saturation VCE(S) maximum 0.6 V at IC=500 mA, IB=50 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 |  |  | V | IC=1.0mA | 1 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 |  |  | V | IE=100μA | 1 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 |  |  | V | IC=100μA | 1 |
| Collector Cutoff Current | ICBO |  |  | 150 | nA | VCB=35V | 1 |
| Emitter Cutoff Current | IEBO |  |  | 150 | nA | VEB=4V | 1 |
| DC Current Gain (Q grade, HFE 150~300) | hFE | 150 |  | 300 |  | IC=50mA, VCE=1V | 2 |
| Collector-Emitter Saturation Voltage | VCE(S) |  |  | 0.6 | V | IC=500mA, IB=50mA | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 20 | V |  | 1 |
| Collector-Base Voltage | VCBO |  |  | 40 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector current-continuous | IC |  |  | 500 | mAdc |  | 1 |
| Total Device Dissipation (FR-5 board) | PD |  |  | 225 | mW | FR-5 board, TA=25°C | 1 |
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA |  |  | 556 | °C/W | FR-5 board | 1 |
| Total Device Dissipation (alumina substrate) | PD |  |  | 300 | mW | Alumina substrate, TA=25°C | 1 |
| Thermal Resistance, Junction to Ambient (alumina substrate) | RθJA |  |  | 417 | °C/W | Alumina substrate | 1 |
| Junction and Storage Temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `S-L9013QLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `s-l9013qlt1g-etched.step` / `s-l9013qlt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s-l9013qlt1g.step` / `s-l9013qlt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](docs/s-l9013qlt1g-datasheet.pdf) (2 pp, sha256 `63e21fdda64b7487`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/s-l9013qlt1g-datasheet.pdf)