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verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 2d ago

S-L9013QLT1G

LRC · Bipolar Transistors - BJT · SOT-23

S-L9013QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives device-level maximum ratings of VEBO 5 V and collector current IC 500 mA, with no separate per-pin limit.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet specifies V(BR)EBO minimum 5 V at IE=100 µA and emitter cutoff current IEBO maximum 150 nA at VEB=4 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives maximum ratings of VCEO 20 V and VCBO 40 V, and collector-emitter saturation VCE(S) maximum 0.6 V at IC=500 mA, IB=50 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 20 V IC=1.0mA 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100μA 1
Collector-Base Breakdown Voltage V(BR)CBO 40 V IC=100μA 1
Collector Cutoff Current ICBO 150 nA VCB=35V 1
Emitter Cutoff Current IEBO 150 nA VEB=4V 1
DC Current Gain (Q grade, HFE 150~300) hFE 150 300 IC=50mA, VCE=1V 2
Collector-Emitter Saturation Voltage VCE(S) 0.6 V IC=500mA, IB=50mA 2
Collector-Emitter Voltage VCEO 20 V 1
Collector-Base Voltage VCBO 40 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector current-continuous IC 500 mAdc 1
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 board, TA=25°C 1
Thermal Resistance, Junction to Ambient (FR-5 board) RθJA 556 °C/W FR-5 board 1
Total Device Dissipation (alumina substrate) PD 300 mW Alumina substrate, TA=25°C 1
Thermal Resistance, Junction to Ambient (alumina substrate) RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature Tj, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: S-L9013QLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-l9013qlt1g-etched.step / s-l9013qlt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-l9013qlt1g.step / s-l9013qlt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (2 pp, sha256 63e21fdda64b7487, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF