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RYC002N05T316
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ryc002n05t316: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
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RYC002N05T316
ROHM Semicon · MOSFETs · SOT-23
RYC002N05T316 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with internal ESD protection diode; gate-source voltage limited to ±8 V and threshold 0.3 to 0.8 V at VDS = 10 V, ID = 1 mA. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, connected to the body diode anode; continuous forward body-diode current is 150 mA max. |
| 3 | Drain | passive | Drain terminal with VDSS of 50 V and continuous drain current of ±200 mA (±800 mA pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 50 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -200 | 200 | mA | 1 | ||
| Pulsed drain current | IDP | -800 | 800 | mA | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -8 | 8 | V | 1 | ||
| Power dissipation | PD | 350 | mW | Mounted on a ceramic board (7.0×5.0×0.8mm) | 1 | ||
| Power dissipation | PD | 200 | mW | Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 357 | ℃/W | Mounted on a ceramic board (7.0×5.0×0.8mm) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 625 | ℃/W | Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 50 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 50V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.3 | 0.8 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 2.2 | Ω | VGS = 4.5V, ID = 200mA; pulsed | 2 | ||
| Static drain - source on - state resistance | RDS(on) | 2.4 | Ω | VGS = 2.5V, ID = 200mA; pulsed | 2 | ||
| Static drain - source on - state resistance | RDS(on) | 2.8 | Ω | VGS = 1.5V, ID = 200mA; pulsed | 2 | ||
| Static drain - source on - state resistance | RDS(on) | 3.3 | Ω | VGS = 1.2V, ID = 100mA; pulsed | 2 | ||
| Static drain - source on - state resistance | RDS(on) | 9 | Ω | VGS = 0.9V, ID = 10mA; pulsed | 2 | ||
| Forward transfer admittance | /Yfs/ | 200 | mS | VDS = 10V, ID = 200mA; pulsed | 2 | ||
| Continuous forward current | IS | 150 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 800 | mA | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 200mA; pulsed | 3 |
CAD (KiCad official)
- Symbol:
RYC002N05T316 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ryc002n05t316-etched.step/ryc002n05t316-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ryc002n05t316.step/ryc002n05t316.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
4f1063ff6e7e6791, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RYC002N05T316
**ROHM Semicon** · MOSFETs · SOT-23
RYC002N05T316 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with internal ESD protection diode; gate-source voltage limited to ±8 V and threshold 0.3 to 0.8 V at VDS = 10 V, ID = 1 mA. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, connected to the body diode anode; continuous forward body-diode current is 150 mA max. |
| 3 | Drain | passive | Drain terminal with VDSS of 50 V and continuous drain current of ±200 mA (±800 mA pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | | | 50 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -200 | | 200 | mA | | 1 |
| Pulsed drain current | IDP | -800 | | 800 | mA | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate - Source voltage | VGSS | -8 | | 8 | V | | 1 |
| Power dissipation | PD | | | 350 | mW | Mounted on a ceramic board (7.0×5.0×0.8mm) | 1 |
| Power dissipation | PD | | | 200 | mW | Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction - ambient | RthJA | | | 357 | ℃/W | Mounted on a ceramic board (7.0×5.0×0.8mm) | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 625 | ℃/W | Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | 50 | | | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 50V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±8V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.3 | | 0.8 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain - source on - state resistance | RDS(on) | | | 2.2 | Ω | VGS = 4.5V, ID = 200mA; pulsed | 2 |
| Static drain - source on - state resistance | RDS(on) | | | 2.4 | Ω | VGS = 2.5V, ID = 200mA; pulsed | 2 |
| Static drain - source on - state resistance | RDS(on) | | | 2.8 | Ω | VGS = 1.5V, ID = 200mA; pulsed | 2 |
| Static drain - source on - state resistance | RDS(on) | | | 3.3 | Ω | VGS = 1.2V, ID = 100mA; pulsed | 2 |
| Static drain - source on - state resistance | RDS(on) | | | 9 | Ω | VGS = 0.9V, ID = 10mA; pulsed | 2 |
| Forward transfer admittance | /Yfs/ | 200 | | | mS | VDS = 10V, ID = 200mA; pulsed | 2 |
| Continuous forward current | IS | | | 150 | mA | Ta = 25℃ | 3 |
| Pulse forward current | ISP | | | 800 | mA | Pw≦10μs, Duty cycle≦1% | 3 |
| Forward voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 200mA; pulsed | 3 |
## CAD (KiCad official)
- Symbol: `RYC002N05T316`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ryc002n05t316-etched.step` / `ryc002n05t316-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ryc002n05t316.step` / `ryc002n05t316.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912618139996160) (13 pp, sha256 `4f1063ff6e7e6791`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ryc002n05t316-datasheet.pdf)