component

RYC002N05T316

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 21d ago
viewers ryc002n05t316: viewers · Ray 21d ago
package.json Publish 0.1.0 · Ray 21d ago
page.json ryc002n05t316: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 16d ago
README.md ryc002n05t316: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 16d ago
ryc002n05t316-etched.glb ryc002n05t316: factory component page (tier=lcsc) · Ray 21d ago
ryc002n05t316-etched.step ryc002n05t316: factory component page (tier=lcsc) · Ray 21d ago
ryc002n05t316-hero.glb ryc002n05t316: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
ryc002n05t316-hero.overlay.json Publish 0.1.0 · Ray 21d ago
ryc002n05t316.glb Publish 0.1.0 · Ray 21d ago
ryc002n05t316.kicad_mod Publish 0.1.0 · Ray 21d ago
ryc002n05t316.kicad_sym Publish 0.1.0 · Ray 21d ago
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ryc002n05t316.step Publish 0.1.0 · Ray 21d ago

RYC002N05T316

ROHM Semicon · MOSFETs · SOT-23

RYC002N05T316 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with internal ESD protection diode; gate-source voltage limited to ±8 V and threshold 0.3 to 0.8 V at VDS = 10 V, ID = 1 mA.
2 Source passive Source terminal of the Nch MOSFET, connected to the body diode anode; continuous forward body-diode current is 150 mA max.
3 Drain passive Drain terminal with VDSS of 50 V and continuous drain current of ±200 mA (±800 mA pulsed).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 50 V Ta = 25°C 1
Continuous drain current ID -200 200 mA 1
Pulsed drain current IDP -800 800 mA Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -8 8 V 1
Power dissipation PD 350 mW Mounted on a ceramic board (7.0×5.0×0.8mm) 1
Power dissipation PD 200 mW Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 357 ℃/W Mounted on a ceramic board (7.0×5.0×0.8mm) 2
Thermal resistance, junction - ambient RthJA 625 ℃/W Mounted on a FR4 (20.0×12.0×0.8mm, Cu pad : 0.8mm2) 2
Drain - Source breakdown voltage V(BR)DSS 50 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 50V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±8V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.3 0.8 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance RDS(on) 2.2 Ω VGS = 4.5V, ID = 200mA; pulsed 2
Static drain - source on - state resistance RDS(on) 2.4 Ω VGS = 2.5V, ID = 200mA; pulsed 2
Static drain - source on - state resistance RDS(on) 2.8 Ω VGS = 1.5V, ID = 200mA; pulsed 2
Static drain - source on - state resistance RDS(on) 3.3 Ω VGS = 1.2V, ID = 100mA; pulsed 2
Static drain - source on - state resistance RDS(on) 9 Ω VGS = 0.9V, ID = 10mA; pulsed 2
Forward transfer admittance /Yfs/ 200 mS VDS = 10V, ID = 200mA; pulsed 2
Continuous forward current IS 150 mA Ta = 25℃ 3
Pulse forward current ISP 800 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD 1.2 V VGS = 0V, IS = 200mA; pulsed 3

CAD (KiCad official)

  • Symbol: RYC002N05T316
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ryc002n05t316-etched.step / ryc002n05t316-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ryc002n05t316.step / ryc002n05t316.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 4f1063ff6e7e6791, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF