# RX3P07CBHC16

**ROHM Semicon** · MOSFETs · TO-220AB

RX3P07CBHC16 from ROHM Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is limited to ±20V and the gate threshold is 2.0 to 4.0V at ID = 1mA. |
| 2 | Drain | passive | Drain terminal, connected to the mounting tab; drain-source voltage is rated at 100V with continuous current of ±70A at Tc = 25°C (±120A silicon limit). |
| 3 | Source | passive | Source terminal, with the body diode running from source to drain, rated for 70A continuous forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS |  |  | 100 | V |  | 1 |
| Continuous drain current (silicon limit) | ID | -120 |  | 120 | A | VGS=10V; limited by silicon chip capability (*1) | 1 |
| Continuous drain current | ID | -70 |  | 70 | A | Tc = 25°C (VGS=10V) (*2) | 1 |
| Pulsed drain current | IDP | -480 |  | 480 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (*3) | 1 |
| Gate - Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS |  |  | 35 | A | *4 | 1 |
| Avalanche energy, single pulse | EAS |  |  | 99 | mJ | *4 | 1 |
| Power dissipation | PD |  |  | 135 | W | Tc = 25°C, limited only by maximum temperature allowed (*2) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 0.92 | ℃/W | *2 Tc=25℃, limited only by maximum temperature allowed | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | 100 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | 62.3 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Zero gate voltage drain current | IDSS |  |  | 5 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -500 |  | 500 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 1mA | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | -4.5 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 4 | 5.2 | mΩ | VGS = 10V, ID = 70A (*5 Pulsed) | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 4.8 | 7.2 | mΩ | VGS = 6V, ID = 35A (*5 Pulsed) | 2 |
| Gate resistance | RG |  | 0.9 |  | Ω |  | 2 |
| Forward transfer admittance | /Yfs/ | 30 |  |  | S | VDS = 5V, ID = 35A (*5 Pulsed) | 2 |
| Input capacitance | Ciss |  | 4650 |  | pF | VGS = 0V | 3 |
| Output capacitance | Coss |  | 890 |  | pF | VDS = 50V | 3 |
| Reverse transfer capacitance | Crss |  | 33 |  | pF | f = 1MHz | 3 |
| Turn - on delay time | td(on) |  | 40 |  | ns | VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) | 3 |
| Rise time | tr |  | 37 |  | ns | VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) | 3 |
| Turn - off delay time | td(off) |  | 99 |  | ns | VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) | 3 |
| Fall time | tf |  | 60 |  | ns | VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) | 3 |
| Total gate charge | Qg |  | 73 |  | nC | VDD ⋍ 50V, ID = 50A, VGS = 10V (*5) | 3 |
| Total gate charge | Qg |  | 48 |  | nC | VDD ⋍ 50V, ID = 50A, VGS = 6V (*5) | 3 |
| Gate - Source charge | Qgs |  | 16.4 |  | nC | VDD ⋍ 50V, ID = 50A (*5) | 3 |
| Gate - Drain charge | Qgd |  | 18.9 |  | nC | VDD ⋍ 50V, ID = 50A (*5) | 3 |
| Continuous forward current | IS |  |  | 70 | A | Ta = 25℃ | 3 |
| Pulse forward current | ISP |  |  | 480 | A | *3 (Pw ≤ 10μs, Duty cycle ≤ 1%) | 3 |
| Forward voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS = 70A (*5) | 3 |
| Reverse recovery time | trr |  | 74 |  | ns | IS = 50A, VGS = 0V, di/dt = 100A/μs (*5) | 3 |
| Reverse recovery charge | Qrr |  | 190 |  | nC | IS = 50A, VGS = 0V, di/dt = 100A/μs (*5) | 3 |

## CAD (KiCad official)

- Symbol: `RX3P07CBHC16`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `rx3p07cbhc16-etched.step` / `rx3p07cbhc16-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rx3p07cbhc16.step` / `rx3p07cbhc16.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rx3p07cbhc16-datasheet.pdf) (13 pp, sha256 `beefe6a8a08effb5`, retrieved 2026-10-29, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rx3p07cbhc16-datasheet.pdf)