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RX3P07CBHC16

Public Made by Adom

by adom

ROHM Semicon MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RX3P07CBHC16

ROHM Semicon · MOSFETs · TO-220AB

RX3P07CBHC16 from ROHM Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is limited to ±20V and the gate threshold is 2.0 to 4.0V at ID = 1mA.
2 Drain passive Drain terminal, connected to the mounting tab; drain-source voltage is rated at 100V with continuous current of ±70A at Tc = 25°C (±120A silicon limit).
3 Source passive Source terminal, with the body diode running from source to drain, rated for 70A continuous forward current.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 100 V 1
Continuous drain current (silicon limit) ID -120 120 A VGS=10V; limited by silicon chip capability (*1) 1
Continuous drain current ID -70 70 A Tc = 25°C (VGS=10V) (*2) 1
Pulsed drain current IDP -480 480 A Pw ≤ 10μs, Duty cycle ≤ 1% (*3) 1
Gate - Source voltage VGSS -20 20 V 1
Avalanche current, single pulse IAS 35 A *4 1
Avalanche energy, single pulse EAS 99 mJ *4 1
Power dissipation PD 135 W Tc = 25°C, limited only by maximum temperature allowed (*2) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - case RthJC 0.92 ℃/W *2 Tc=25℃, limited only by maximum temperature allowed 2
Drain - Source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID = 1mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 62.3 mV/℃ ID = 1mA, referenced to 25℃ 2
Zero gate voltage drain current IDSS 5 μA VDS = 100V, VGS = 0V 2
Gate - Source leakage current IGSS -500 500 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 1mA 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -4.5 mV/℃ ID = 1mA, referenced to 25℃ 2
Static drain - source on - state resistance RDS(on) 4 5.2 mΩ VGS = 10V, ID = 70A (*5 Pulsed) 2
Static drain - source on - state resistance RDS(on) 4.8 7.2 mΩ VGS = 6V, ID = 35A (*5 Pulsed) 2
Gate resistance RG 0.9 Ω 2
Forward transfer admittance /Yfs/ 30 S VDS = 5V, ID = 35A (*5 Pulsed) 2
Input capacitance Ciss 4650 pF VGS = 0V 3
Output capacitance Coss 890 pF VDS = 50V 3
Reverse transfer capacitance Crss 33 pF f = 1MHz 3
Turn - on delay time td(on) 40 ns VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) 3
Rise time tr 37 ns VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) 3
Turn - off delay time td(off) 99 ns VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) 3
Fall time tf 60 ns VDD ⋍ 50V, VGS = 10V, ID = 35A, RL ⋍ 1.42Ω, RG = 10Ω (*5) 3
Total gate charge Qg 73 nC VDD ⋍ 50V, ID = 50A, VGS = 10V (*5) 3
Total gate charge Qg 48 nC VDD ⋍ 50V, ID = 50A, VGS = 6V (*5) 3
Gate - Source charge Qgs 16.4 nC VDD ⋍ 50V, ID = 50A (*5) 3
Gate - Drain charge Qgd 18.9 nC VDD ⋍ 50V, ID = 50A (*5) 3
Continuous forward current IS 70 A Ta = 25℃ 3
Pulse forward current ISP 480 A *3 (Pw ≤ 10μs, Duty cycle ≤ 1%) 3
Forward voltage VSD 1.2 V VGS = 0V, IS = 70A (*5) 3
Reverse recovery time trr 74 ns IS = 50A, VGS = 0V, di/dt = 100A/μs (*5) 3
Reverse recovery charge Qrr 190 nC IS = 50A, VGS = 0V, di/dt = 100A/μs (*5) 3

CAD (KiCad official)

  • Symbol: RX3P07CBHC16
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: rx3p07cbhc16-etched.step / rx3p07cbhc16-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rx3p07cbhc16.step / rx3p07cbhc16.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 beefe6a8a08effb5, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF