component
RW1A025APT2CR
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ROHM Semicon MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RW1A025APT2CR
ROHM Semicon · MOSFETs · SOT-563
RW1A025APT2CR from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 2 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 3 | Gate | input | Gate terminal of the MOSFET, with gate-source voltage rated 0 to 8 V (VGSS) in the absolute maximum ratings. |
| 4 | Source | passive | Source terminal of the MOSFET; the datasheet shows an ESD protection diode and a body diode in the inner circuit between drain and source. |
| 5 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 6 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 12 | V | 1 | |||
| Gate-source voltage | VGSS | 0 | 8 | V | 1 | ||
| Continuous drain current | ID | 2.5 | A | 1 | |||
| Pulsed drain current | IDP | 7.5 | A | Pw10s, Duty cycle1% | 1 | ||
| Continuous source current (body diode) | IS | 0.5 | A | 1 | |||
| Pulsed source current (body diode) | ISP | 7.5 | A | Pw10s, Duty cycle1% | 1 | ||
| Power dissipation | PD | 0.7 | W | Mounted on a ceramic board | 1 | ||
| Channel temperature | Tch | 150 | C | 1 | |||
| Range of storage temperature | Tstg | -55 | 150 | C | 1 | ||
| Channel to ambient thermal resistance | Rth(ch-a) | 179 | C / W | Mounted on a ceramic board | 1 | ||
| Gate-source leakage | IGSS | 10 | A | VGS=8V, VDS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | A | VDS=12V, VGS=0V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 12 | V | ID=1mA, VGS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | 0.3 | 1 | V | VDS=6V, ID=1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 44 | 62 | mΩ | ID=2.5A, VGS=4.5V | 2 | |
| Static drain-source on-state resistance | RDS(on) | 55 | 77 | mΩ | ID=1.2A, VGS=2.5V | 2 | |
| Static drain-source on-state resistance | RDS(on) | 75 | 110 | mΩ | ID=1.2A, VGS=1.8V | 2 | |
| Static drain-source on-state resistance | RDS(on) | 90 | 180 | mΩ | ID=0.5A, VGS=1.5V | 2 | |
| Forward transfer admittance | /Yfs/ | 3.5 | S | ID=2.5A, VDS=6V | 2 |
CAD (KiCad official)
- Symbol:
RW1A025APT2CR - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
rw1a025apt2cr-etched.step/rw1a025apt2cr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rw1a025apt2cr.step/rw1a025apt2cr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (7 pp, sha256
9a3b554793d0b799, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RW1A025APT2CR
**ROHM Semicon** · MOSFETs · SOT-563
RW1A025APT2CR from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 2 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 3 | Gate | input | Gate terminal of the MOSFET, with gate-source voltage rated 0 to 8 V (VGSS) in the absolute maximum ratings. |
| 4 | Source | passive | Source terminal of the MOSFET; the datasheet shows an ESD protection diode and a body diode in the inner circuit between drain and source. |
| 5 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
| 6 | Drain | passive | Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | | | 12 | V | | 1 |
| Gate-source voltage | VGSS | 0 | | 8 | V | | 1 |
| Continuous drain current | ID | | | 2.5 | A | | 1 |
| Pulsed drain current | IDP | | | 7.5 | A | Pw10s, Duty cycle1% | 1 |
| Continuous source current (body diode) | IS | | | 0.5 | A | | 1 |
| Pulsed source current (body diode) | ISP | | | 7.5 | A | Pw10s, Duty cycle1% | 1 |
| Power dissipation | PD | | | 0.7 | W | Mounted on a ceramic board | 1 |
| Channel temperature | Tch | | | 150 | C | | 1 |
| Range of storage temperature | Tstg | -55 | | 150 | C | | 1 |
| Channel to ambient thermal resistance | Rth(ch-a) | | | 179 | C / W | Mounted on a ceramic board | 1 |
| Gate-source leakage | IGSS | | | 10 | A | VGS=8V, VDS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | 10 | A | VDS=12V, VGS=0V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 12 | | | V | ID=1mA, VGS=0V | 2 |
| Gate threshold voltage | VGS(th) | 0.3 | | 1 | V | VDS=6V, ID=1mA | 2 |
| Static drain-source on-state resistance | RDS(on) | | 44 | 62 | mΩ | ID=2.5A, VGS=4.5V | 2 |
| Static drain-source on-state resistance | RDS(on) | | 55 | 77 | mΩ | ID=1.2A, VGS=2.5V | 2 |
| Static drain-source on-state resistance | RDS(on) | | 75 | 110 | mΩ | ID=1.2A, VGS=1.8V | 2 |
| Static drain-source on-state resistance | RDS(on) | | 90 | 180 | mΩ | ID=0.5A, VGS=1.5V | 2 |
| Forward transfer admittance | /Yfs/ | 3.5 | | | S | ID=2.5A, VDS=6V | 2 |
## CAD (KiCad official)
- Symbol: `RW1A025APT2CR`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `rw1a025apt2cr-etched.step` / `rw1a025apt2cr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rw1a025apt2cr.step` / `rw1a025apt2cr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226477624434689) (7 pp, sha256 `9a3b554793d0b799`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rw1a025apt2cr-datasheet.pdf)