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RW1A025APT2CR

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ROHM Semicon MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RW1A025APT2CR

ROHM Semicon · MOSFETs · SOT-563

RW1A025APT2CR from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID).
2 Drain passive Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID).
3 Gate input Gate terminal of the MOSFET, with gate-source voltage rated 0 to 8 V (VGSS) in the absolute maximum ratings.
4 Source passive Source terminal of the MOSFET; the datasheet shows an ESD protection diode and a body diode in the inner circuit between drain and source.
5 Drain passive Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID).
6 Drain passive Drain terminal of the silicon P-channel MOSFET, rated for 12 V drain-source voltage (VDSS) and 2.5 A continuous drain current (ID).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 12 V 1
Gate-source voltage VGSS 0 8 V 1
Continuous drain current ID 2.5 A 1
Pulsed drain current IDP 7.5 A Pw10s, Duty cycle1% 1
Continuous source current (body diode) IS 0.5 A 1
Pulsed source current (body diode) ISP 7.5 A Pw10s, Duty cycle1% 1
Power dissipation PD 0.7 W Mounted on a ceramic board 1
Channel temperature Tch 150 C 1
Range of storage temperature Tstg -55 150 C 1
Channel to ambient thermal resistance Rth(ch-a) 179 C / W Mounted on a ceramic board 1
Gate-source leakage IGSS 10 A VGS=8V, VDS=0V 2
Zero gate voltage drain current IDSS 10 A VDS=12V, VGS=0V 2
Drain-source breakdown voltage V(BR)DSS 12 V ID=1mA, VGS=0V 2
Gate threshold voltage VGS(th) 0.3 1 V VDS=6V, ID=1mA 2
Static drain-source on-state resistance RDS(on) 44 62 mΩ ID=2.5A, VGS=4.5V 2
Static drain-source on-state resistance RDS(on) 55 77 mΩ ID=1.2A, VGS=2.5V 2
Static drain-source on-state resistance RDS(on) 75 110 mΩ ID=1.2A, VGS=1.8V 2
Static drain-source on-state resistance RDS(on) 90 180 mΩ ID=0.5A, VGS=1.5V 2
Forward transfer admittance /Yfs/ 3.5 S ID=2.5A, VDS=6V 2

CAD (KiCad official)

  • Symbol: RW1A025APT2CR
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: rw1a025apt2cr-etched.step / rw1a025apt2cr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rw1a025apt2cr.step / rw1a025apt2cr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (7 pp, sha256 9a3b554793d0b799, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF