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RU8205C6

Public Made by Adom

by adom

Shenzhen ruichips Semicon MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RU8205C6

Shenzhen ruichips Semicon · MOSFETs · SOT-23-6

RU8205C6 from Shenzhen ruichips Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDSS 20V, ID 6A at TA=25°C, RDS(ON) 18mΩ typ at VGS=4.5V).
2 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5 (VDSS 20V, ID 6A at TA=25°C).
3 S2 passive Source of MOSFET 2 (N-channel, VDSS 20V, ID 6A at TA=25°C, RDS(ON) 18mΩ typ at VGS=4.5V).
4 G2 input Gate of MOSFET 2 (VGSS ±12V, threshold 0.5V min / 0.7V typ / 1.5V max at IDS=250µA).
5 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2 (VDSS 20V, ID 6A at TA=25°C).
6 G1 input Gate of MOSFET 1 (VGSS ±12V, threshold 0.5V min / 0.7V typ / 1.5V max at IDS=250µA).

Key specifications

Parameter Value
Manufacturer Shenzhen ruichips Semicon
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -12 12 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Diode Continuous Forward Current IS 1.7 A TA=25°C, mounted on large heat sink 1
Pulse Drain Current IDP 24 A 300µs pulse, TA=25°C 1
Continuous Drain Current ID 6 A VGS=4.5V, TA=25°C 1
Continuous Drain Current ID 4.5 A VGS=4.5V, TA=70°C 1
Maximum Power Dissipation PD 1.25 W TA=25°C 1
Maximum Power Dissipation PD 0.75 W TA=70°C 1
Thermal Resistance-Junction to Ambient RqJA 100 °C/W Mounted on 1 inch square copper board, t≤10sec 1
Gate Threshold Voltage VGS(th) 0.5 0.7 1.5 V VDS=VGS, IDS=250µA 2
Gate Leakage Current IGSS -100 100 nA VGS=±10V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 18 22 mΩ VGS=4.5V, IDS=6A; pulse test 2
Drain-Source On-state Resistance RDS(ON) 23 28 mΩ VGS=2.5V, IDS=5A; pulse test 2

CAD (KiCad official)

  • Symbol: RU8205C6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: ru8205c6-etched.step / ru8205c6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru8205c6.step / ru8205c6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen ruichips Semicon datasheet (7 pp, sha256 4f3618417bb95a73, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF